Datasheet

Parameter Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
I
F
= 30 mA V
F
All — 1.25 1.55 V
Input Forward Voltage
Reverse Leakage Current V
R
= 6.0 V I
R
All — 0.001 100 µA
Capacitance C All — 18 — pF
DETECTOR
Collector-Emitter Dark Current
V
CE
= 10 V, T
A
= 25°CI
CEO
All
— 1.0 50 nA
V
CE
= 10 V, T
A
= 100°CI
CEO
All
— 1.0 — µA
Collector-Emitter Breakdown Voltage I
C
= 100 µAV
(BR)CEO
All 70 100 — V
Emitter-Collector Breakdown Voltage I
E
= 100 µAV
(BR)ECO
All 7.0 10 — V
Collector-Emitter Capacitance f = 1.0 MHz, V
CE
= 0 V C
CE
All — 7.0 — pF
COUPLED
I
F
= 10 mA, V
CE
= 5 V
MOCD207 100 150 200
Current Transfer Ratio,
CTR
MOCD208
40 — 125
Collector to Emitter
(4)
I
F
= 1 mA, V
CE
= 5 V
MOCD207 34 ——
%
MOCD208 13 ——
Collector-Emitter Saturation Voltage I
C
= 2.0 mA, I
F
= 10 mA V
CE (sat)
All —
—
0.4 V
Turn-On Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100 Ω t
on
All — 3.0 — µs
Turn-Off Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100 Ω t
off
All — 2.8 — µs
Rise Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100 Ω t
r
All — 1.6 — µs
Fall Time I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100 Ω t
f
All — 2.2 — µs
Isolation Surge Voltage
(1,2)
f = 60 Hz, t = 1 min. V
ISO
All
2500 ——Vac(rms)
Isolation Resistance
(2)
V
I-O
= 500 V R
ISO
All
10
11
——!
Isolation Capacitance
(2)
V
I-O
= 0 V, f = 1 MHz C
ISO
All
— 0.2 — pF
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C
unless otherwise specified)
(3)
NOTE:
1. Input-Output Isolation Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. Always design to the specified minimum/maximum electrical limits (where applicable).
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
www.fairchildsemi.com 2 OF 6 12/19/01 DS300270
** Typical values at T
A
= 25°C
MOCD207M MOCD208M
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS