2001-04-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-033-69 MPSA06 trans
MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 4.
(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 4.0 V ICEO Collector-Cutoff Current VCE = 60 V, IB = 0 0.1 µA ICBO Collector-Cutoff Current VCB = 80 V, IE = 0 0.1 µA 0.25 V 1.
(continued) (continued) 1000 125 β = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 0.1 1 10 100 I C - COLLECTOR CURRE NT (mA) 10 VCB = 80 V 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 VCE = 5V 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 1000 Collector Saturation Region 2 T A = 25°C 1.5 1 0.1 0.01 1 IC = 1 mA 100 mA 10 mA 0.
(continued) (continued) Gain Bandwidth Product vs Collector Current Power Dissipation vs Ambient Temperature 400 1 V CE = 5V P D - POWER DISSIPATION (W) f T - GAIN BANDWIDTH PRODUCT (MHz) Typical Characteristics 350 300 250 200 150 1 10 20 50 100 I C - COLLECTOR CURRENT (mA) TO-92 0.5 SOT-23 0.25 0 100 SOT-223 0.
TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 ©2000 Fairchild Semiconductor International January 2000, Rev.
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