Datasheet

6/15/05
Page 3 of 14
© 2005 Fairchild Semiconductor Corporation
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
TIL111 TIL111-M TIL117-M MOC8100-M
Note
* Typical values at T
A
= 25°C unless otherwise noted
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Device Symbol Min Typ* Max Unit
EMITTER
Input Forward Voltage (I
F
= 16 mA) (T
A
= 25°C) TIL111/TIL111-M
V
F
1.2 1.4
V
(I
F
= 10 mA; for
MOC8100-M)
(I
F
= 16 mA; for
TIL117-M)
(T
A
= 0-70°C)
MOC8100-M/
TIL117-M
1.2 1.4
(T
A
= -55°C) 1.32
(T
A
= +100°C) 1.10
Reverse Leakage Current
(V
R
= 3.0 V)
TIL111/TIL111-M/
TIL117-M
I
R
0.001 10 µA
(V
R
= 6.0V) MOC8100-M 0.001 10 µA
DETECTOR
Collector-Emitter Breakdown Voltage (I
C
= 1.0 mA, I
F
= 0) All BV
CEO
30 100 V
Collector-Base Breakdown Voltage (I
C
= 10 µA, I
F
= 0) All BV
CBO
70 120 V
Emitter-Base Breakdown Voltage (I
E
= 10 µA, I
F
= 0) All BV
EBO
710 V
Emitter-Collector Breakdown Voltage (I
F
= 100µA, I
F
= 0)
TIL111-M
TIL117-M
BV
ECO
710 V
Collector-Emitter Dark Current
(V
CE
= 10 V, I
F
= 0)
TIL111/TIL111-M/
TIL117-M
I
CEO
1 50 nA
(V
CE
= 5V, T
A
= 25°C) MOC8100-M I
CEO
0.5 25 nA
(V
CE
= 30 V, I
F
= 0, T
A
= 70°C)
TIL117-M/
MOC8100-M
I
CEO
0.2 50 µA
Collector-Base Dark Current
(V
CB
= 10 V)
TIL111/TIL111-M/
TIL117-M
I
CBO
20 nA
(V
CB
= 5 V) MOC8100-M I
CBO
10 nA
Capacitance (V
CE
= 0 V, f = 1 MHz) All C
CE
8pF
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ* Max Units
Input-Output Isolation Voltage
(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)
V
ISO
5300 Vac(rms)
(‘-M’, White Package) (f = 60 Hz, t = 1 sec) 7500 Vac(pk)
Isolation Resistance (V
I-O
= 500 VDC) R
ISO
10
11
Ω
Isolation Capacitance (V
I-O
= 0, f = 1 MHz) C
ISO
2pF