Datasheet

6/15/05
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
Page 4 of 14
© 2005 Fairchild Semiconductor Corporation
TIL111 TIL111-M TIL117-M MOC8100-M
* Typical values at T
A
= 25°C
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit
Current Transfer Ratio,
Collector to Emitter
(I
F
= 10 mA, V
CE
= 10 V)
CTR
CE
TIL117-M 50 %
(I
F
= 1 mA, V
CE
= 5 V)
MOC8100-M
50
%
(I
F
= 1 mA, V
CE
= 5 V, T
A
= 0 to +70°C) 30
On-State Collector Current
(Phototransistor Operation)
(I
F
= 16 mA, V
CE
= 0.4 V)
I
C(ON)
TIL111
TIL111-M
2mA
On-State Collector Current
(Photodiode Operation)
(I
F
= 16 mA, V
CB
= 0.4V) 7 µA
Collector-Emitter Saturation
Voltage
(I
C
= 500 µA, I
F
= 10 mA)
V
CE (SAT)
TIL117-M 0.4
V(I
C
= 2 mA, I
F
= 16 mA)
TIL111
TIL111-M
0.4
(I
C
= 100 µA, I
F
= 1 mA) MOC8100-M 0.5
AC Characteristic
Tur n-On Time
(I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100 Ω ) (Fig. 20)
T
ON
MOC8100-M 20
µs
TIL117-M 10
Tur n-Off Time T
OFF
MOC8100-M 20
µs
TIL117-M 10
Rise Time t
r
MOC8100-M
TIL117-M
2
µs
Fall Time t
f
2
Rise Time
(Phototransistor Operation)
(I
C(ON)
= 2 mA, V
CC
= 10 V,
R
L
= 100 Ω ) (Fig. 20)
t
r
TIL111
TIL111-M
10 µs
Fall Time
(Phototransistor Operation)
t
f