Datasheet

Quad-Core Intel® Xeon® Processor 5300 Series Datasheet 41
Electrical Specifications
Figure 2-11. Quad-Core Intel® Xeon® Processor L5318 V
CC
Static and Transient Tolerance
Load Lines
Notes:
1. The V
CC_MIN
and V
CC_MAX
loadlines represent static and transient limits. Please see Section 2.13.2 for VCC
overshoot specifications.
2. Refer to Table 2-12 for processor VID information.
3. Refer to Table 2-15 for V
CC
Static and Transient Tolerance.
4. The load lines specify voltage limits at the die measured at the VCC_DIE_SENSE and VSS_DIE_SENSE
lands and the VCC_DIE_SENSE2 and VSS_DIE_SENSE2 lands. Voltage regulation feedback for voltage
regulator circuits must also be taken from processor VCC_DIE_SENSE and VSS_DIE_SENSE lands and
VCC_DIE_SENSE2 and VSS_DIE_SENSE2 lands. Refer to the Voltage Regulator Module (VRM) and
Enterprise Voltage Regulator Down (EVRD) 11.0 Design Guidelines for socket load line guidelines and VR
implementation. Please refer to the appropriate platform design guide for details on VR implementation.
Notes:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. V
IL
is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low
value.
3. V
IH
is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high
value.
4. V
IH
and V
OH
may experience excursions above V
TT
. However, input signal drivers must comply with the
signal quality specifications.
5. This is the pull down driver resistance. Refer to processor I/O Buffer Models for I/V characteristics.
Measured at 0.31*V
TT
. R
ON
(min) = 0.225*R
TT
. R
ON
(typ) = 0.250*R
TT
. R
ON
(max) = 0.275*R
TT
.
Table 2-16. AGTL+ Signal Group Specifications
Symbol Parameter Min Typ Max Units Notes
1
V
IL
Input Low Voltage -0.10 0 GTLREF-0.10 V 2,4,6
V
IH
Input High Voltage GTLREF+0.10 V
TT
V
TT
+0.10 V 3,6
V
OH
Output High Voltage V
TT
- 0.10 N/A V
TT
V4,6
R
ON
Buffer On Resistance 10.00 11.50 13.00 5
I
LI
Input Leakage Current N/A N/A ± 200 μA7,8