User's Manual

Cinterion
®
ELS61-AUS Hardware Interface Description
2.1 Application Interface
52
 ELS61-AUS_HID_v00.031 2016-06-03
Confidential / Preliminary
Page 17 of 102
2.1.2 Signal Properties
Table 2: Signal properties
Function Signal name IO Signal form and level Comment
Power
supply
BATT+
BB
BATT+
RF
I WCDMA activated:
V
I
max = 4.5V
V
I
norm = 4.0V
V
I
min = 3.0V during Transmit active.
Imax = 700mA during Tx
LTE activated:
V
I
max = 4.5V
V
I
norm = 4.0V
V
I
min = 3.0V during Transmit active.
Lines of BATT+ and GND
must be connected in
parallel for supply pur-
poses because higher
peak currents may occur.
Minimum voltage must
not fall below 3.0V includ-
ing drop, ripple, spikes
and not rise above 4.5V.
BATT+
BB
and BATT+
RF
require an ultra low ESR
capacitor:
BATT+
BB
--> 50µF
BATT+
RF
--> 150µF
If using Multilayer
Ceramic Chip Capacitors
(MLCC) please take DC-
bias into account.
Power
supply
GND Ground Application Ground
External
supply
voltage
V180 O Normal operation:
V
O
norm = 1.80V ±3%
I
O
max = -10mA
SLEEP mode Operation:
V
O
Sleep = 1.80V ±5%
I
O
max = -10mA
CLmax = 2µF
V180 should be used to
supply level shifters at
the interfaces or to supply
external application cir-
cuits.
VCORE and V180 may
be used for the power
indication circuit.
V180 is sensitive to back
powering. While not used
V
I
max must be <0.2V.
If unused keep lines
open.
VCORE O V
O
norm = 1.2V
I
O
max = -10mA
CLmax = 100nF
SLEEP mode Operation:
V
O
Sleep = 0.90V...1.2V ±4%
I
O
max = -10mA
Ignition ON I V
IH
max = 5V tolerant
V
IH
min = 1.3V
V
IL
max = 0.5V
Slew rate <= 1ms
ON ___|~~~~
This signal switches the
module on, and is rising
edge sensitive triggered.
Emer-
gency
restart
EMERG_RST I R
I
≈ 1kΩ, C
I
≈ 1nF
V
OH
max = VDDLP max
V
IH
min = 1.35V
V
IL
max = 0.3V at ~200µA
~~|___|~~ low impulse width > 10ms
This line must be driven
low by an open drain or
open collector driver con-
nected to GND.
If unused keep line open.