Data Sheet

NPN Silicon Darlington Transistors SC 875
. . . BC 879
l High current gain
0 Low collector-emitter Saturation voltage
0 Complementary types: BC 876, BC 878
BC 880 (PNP)
Type
BC 875
BC 877
BC 879
Marking
Ordering Code
Pin Configuration Packagel)
1 2 3
C62702-C853 E C B TO-92
C62702-C854
C62702-C855
Maximum Ratings
Pararheter Symbol Values Unit
BC875 1 BC877 1 BC879
Collector-emitter voltaae I VCEO
145 160
180 IV
Collector-base voltage
Emitter-base voltage
Vceo 60 80 100
VEB0 5
Collector current
I fc I
1
IA
Peak collector current
Base current
ICI.4
2
IB 100
mA
Peak base current
I IBM
I
200
I
Total power dissipation, T C = 90 % 2) P rot 0.8 (1)
W
Junction temperature
E
150 %
Storage temperature range
1 Tstg I
-65 .:. + 150
I
Thermal Resistance
Junction - ambient 2)
Junction - case 3)
RIhJA
Cl56 Klw
Rthx 5 75
$1 For detailed information see chapter Package Outlines.
21 If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large topper
area for the collector terminal, RWA = 125 KfW and thus Pt01 ~SX = 1 W at T A = 25 ‘C.
3) Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm.
383
5.91