Datasheet

Si PIN photodiodes
S10783 S10784
High-speed detectors with plastic package
www.hamamatsu.com
1
The S10783 and S10784 are high-speed APC (auto power control) detectors developed for monitoring laser diodes with a
peak wavelength of 660 nm or 780 nm. The S10783 is designed for surface mount and the S10784 is a plastic package with
φ3 mm lens.
High-speed response
300 MHz typ. (λ=650 nm, V
R=2.5 V)
250 MHz typ. (λ=780 nm, V
R=2.5 V)
High sensitivity
S10783: 0.46 A/W typ. (λ=650 nm)
S10784: 0.45 A/W typ. (λ=650 nm)
Laser diode monitor of optical disk unit (high-speed APC)
Sensor for red laser diode
Structure
Absolute maximum ratings
Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol S10783 S10784 Unit
Photosensitive area size -
φ0.8 φ3.0
mm
Effective photosensitive area - 0.5 7.0 mm
2
Package - Surface mount type plastic Plastic with lens -
Parameter Symbol S10783 S10784 Unit
Reverse voltage V
R max. 20 V
Power dissipation P 50 mW
Operating temperature Topr -25 to +85 °C
Storage temperature Tstg -40 to +100 °C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum r
atings.
Parameter Symbol Condition
S10783 S10784
Unit
Min. Typ. Max. Min. Typ. Max.
Spectral response range
λ
330 to 1040 340 to 1040 nm
Peak sensitivity wavelength
λp
- 760 - - 760 - nm
Photosensitivity S
λ=660 nm
0.41 0.46 - 0.40 0.45 -
A/W
λ=780 nm
0.47 0.52 - 0.46 0.51 -
Dark current I
D VR=2.5 V - 0.01 1.0 - 0.01 1.0 nA
Temperature coeffi cient of I
D TCID - 1.15 - - 1.15 - times/°C
Cutoff frequency fc
VR=2.5 V
R
L=50 Ω
λ=660 nm
150 300 - 150 300 -
MHz
λ=780 nm
125 250 - 125 250 -
Terminal capacitance Ct V
R=2.5 V, f=1 MHz - 4.5 9 - 4.5 9 pF
Noise equivalent power NEP V
R=2.5 V - 3.5 × 10
-15
-- 3.5 × 10
-15
- W/Hz
1/2
Features Applications