Datasheet

GaAs Infrared Emitting Diode

SE3455/5455

ELECTRICAL CHARACTERISTICS

UNITS

TEST CONDITIONS

MIN

PARAMETER

SYMBOL

TYP

MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current

100 mA

Peak Forward Current

3 A

(1µs pulse width, 300 pps)

Power Dissipation

150 mW [À]

Operating Temperature Range

-55¡C to 125¡C

Storage Temperature Range

-65¡C to 150¡C

Soldering Temperature (10 sec)

260¡C

Notes

1. Derate linearly from 25¡C free-air temperature at the rate of

1.43 mW/¡C.

SCHEMATIC

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changes in order to improve design and

supply the best products possible.