Datasheet

GaAs Infrared Emitting Diode
SE3455/5455
Radiant Intensity vs
Angular Displacement (SE3455)
gra_017.ds4
Angular displacement - degrees
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Radiant Intensity vs
Angular Displacement (SE5455)
gra_023.ds4
Angular displacement - degrees
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 2
Radiant Intensity vs
Forward Current
gra_018.ds4
Forward current - mA
N
o
r
m
a
l
i
z
e
d
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
-
%
0.0
50
100
150
200
250
0 100 200 300 400 500
Pulsed
Fig. 3 Forward Voltage vs
Forward Current
gra_019.ds4
Forward current - mA
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
0 20 40 60 80 100
Fig. 4
Forward Voltage vs
Temperature
gra_020.ds4
Temperature - °C
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
1.21
1.23
1.25
1.27
1.29
1.31
1.33
1.35
-30 -10 10 30 50 70 90
I
F
=100 mA
Fig. 5 Spectral Bandwidth
gra_005.ds4
Wavelength - nm
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 6
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
30