Datasheet

AlGaAs Infrared Emitting Diode
SEP8705
Radiant Intensity vs
Angular Displacement
gra_027.ds4
Angular displacement - degrees
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Radiant Intensity vs
Forward Current
gra_028.ds4
Forward current - mA
N
o
r
m
a
l
i
z
e
d
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
0.1
0.2
0.5
1.0
2.0
5.0
10.0
10 20 30 40 50 100
T
A
= 25 °C
Fig. 2
Forward Voltage vs
Forward Current
gra_201.ds4
Forward current - mA
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0 10 20 30 40 50
Fig. 3 Forward Voltage vs
Temperature
gra_208.ds4
Temperature - °C
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
1.20
1.25
1.35
1.40
1.50
1.55
1.60
-40 -15 10 35 60
85
I
F
= 20 mA
1.45
1.30
Fig. 4
Spectral Bandwidth
gra_011.ds4
Wavelength - nm
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
760 800 840 880 920 960 1000
Fig. 5 Coupling Characteristics
with SDP8405
gra_029.ds4
Lens-to-lens separation - inches
L
i
g
h
t
c
u
r
r
e
n
t
-
m
A
0.1
0.2
0.4
1
2
4
10
0.01 0.2 0.4 0.7 1 0.02 0.04 0.1
0.7
7
V
CE
= 5 V
I
F
= 25 mA
T
A
= 25 °C
Fig. 6
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
50