Data Sheet

ManualsBrandsHP ManualsIR ComponentsIR emitter 875 nm 17 ° 5 mm Radial lead HDSL-4230 ()

SPECIFICATION

PART NO. : WU-8-33GD

2.9mm ROUND LED LAMP

Approved by Checked by Prepared by

Feng Yang Hua

Vossloh Schwabe Optoelectronic GmbH & Co. KG

47475 Kamp-Lintfort

TEL: 02842-980-0

FAX: 02842-980-297

Http://www.vs-optoelectronic.com

Summary of content (5 pages)

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Vossloh Schwabe Optoelectronic GmbH & Co. KG 47475 Kamp-Lintfort TEL: 02842-980-0 FAX: 02842-980-297 Http://www.vs-optoelectronic.com SPECIFICATION PART NO. : WU-8-33GD 2.
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.9 mm ROUND LED LAMP WU-8-33GD Description This green lamp is made with GaP/GaP chip and green diffused epoxy resin. A K Notes: 1. All dimensions are in mm. 2. Tolerance is 0.25mm unless otherwise noted. Description LED Chip Part No. WU-8-33GD Material GaP/GaP Emitting Color Green Lens Color Green diffused VER.
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2.9 mm ROUND LED LAMP WU-8-33GD Absolute Maximum Ratings at Ta=25℃ Parameter Symbol Rating Unit Power Dissipation PD 78 mW Reverse Voltage VR 5 V D.C. Forward Current If 30 mA Reverse (Leakage) Current Ir 100 μA If(Peak) 100 mA Operating Temperature Range Topr. -25 to +85 ℃ Storage Temperature Range Tstg. -40 to +100 ℃ Soldering Temperature(1.6mm from body) Tsol. Peak Current(1/10Duty Cycle,0.1ms Pulse Width.) Dip Soldering : 260℃ for 5 sec.
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2.9 mm ROUND LED LAMP WU-8-33GD Typical Electrical / Optical Characteristics Curves : 30 Relative Luminous Intensity Forward Current IF(mA) 50 40 30 20 10 1.2 1.6 2.0 2.4 2.8 18 12 6 0 3.2 Applied Voltage (V) FORWARD CURRENT VS.APPLIED VOLTAGE 24 20.0 10.0 0.0 30.0 Forward Current (mA) FORWARD CURRENT VS. LUMINOUS INTENSITY 0° 50 10° 20° Forward Current IF(mA) 30° 40 40° 30 1.0 20 60° 0.8 10 0 50° 0.9 20 40 60 Temperature(。C) 80 100 FORWARD CURRENT VS.
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WU-8-33GD 2.9 mm ROUND LED LAMP Precautions: TAKE NOTE OF THE FOLLOWING IN USE OF LED 1. Tem perature in use Since the light generated inside the LED needs to be emitted to outside efficiently, a resin with high light transparency is used; therefore, additives to improve the heat resistance or moisture resistance (silica gel , etc) which are used for semiconductor products such as transistors cannot be added to the resin.