Datasheet

4-48
H
High-Performance T-1
3
/4 (5 mm)
TS AlGaAs Infrared (875 nm)
Lamp
Technical Data
HSDL-4200 Series
HSDL-4220 30°
HSDL-4230 17°
Features
• Very High Power TS AlGaAs
Technology
• 875 nm Wavelength
• T-1
3
/4 Package
• Low Cost
• Very High Intensity:
HSDL-4220 - 38 mW/sr
HSDL-4230 - 75 mW/sr
• Choice of Viewing Angle:
HSDL-4220 - 30°
HSDL-4230 - 17°
• Low Forward Voltage for
Series Operation
• High Speed: 40 ns Rise Times
• Copper Leadframe for
Improved Thermal and
Optical Characteristics
Applications
• Compatible with IrDA SIR
Standard
• IR Audio
• IR Telephones
• High Speed IR
Communications
IR LANs
IR Modems
IR Dongles
• Industrial IR Equipment
Package Dimensions
• IR Portable Instruments
• Interfaces with Crystal
Semiconductor CS8130
Infrared Transceiver
Description
The HSDL-4200 series of emitters
are the first in a sequence of
emitters that are aimed at high
power, low forward voltage, and
high speed. These emitters utilize
the Transparent Substrate, double
heterojunction, Aluminum Gal-
lium Arsenide (TS AlGaAs) LED
technology. These devices are
optimized for speed and efficiency
at emission wavelengths of 875
nm. This material produces high
radiant efficiency over a wide
range of currents up to 500 mA
peak current. The HSDL-4200
series of emitters are available in
a choice of viewing angles, the
HSDL-4230 at 17° and the
HSDL-4220 at 30°. Both lamps
are packaged in clear T-1
3
/4
(5 mm) packages.
5.00 ± 0.20
(0.197 ± 0.008)
1.27
(0.050)
NOM.
1.14 ± 0.20
(0.045 ± 0.008)
8.70 ± 0.20
(0.343 ± 0.008)
2.35
(0.093)
MAX.
0.70
(0.028)
MAX.
0.50 ± 0.10
(0.020 ± 0.004)
SQUARE
CATHODE
5.80 ± 0.20
(0.228 ± 0.008)
CATHODE
2.54
(0.100)
NOM.
31.4
(1.23)
MIN.
5964-9642E