User Manual
Intel
®
Xeon
®
Processor 5600 Series Datasheet Volume 1 43
Electrical Specifications
Notes:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. V
IL
is the maximum voltage level at a receiving agent that will be interpreted as a logical low value.
3. V
IH
is the minimum voltage level at a receiving agent that will be interpreted as a logical high value.
4. V
IH
and V
OH
may experience excursions above V
DDQ
. However, input signal drivers must comply with the
signal quality specifications. Refer to Section 3.
5. This is the pull down driver resistance.
6. R
VTT_TERM
is the termination on the DIMM and not controlled by the processor. Please refer to the applicable
DIMM datasheet.
7. The minimum and maximum values for these signals are programmable by BIOS to one of the pairs.
8. COMP resistance must be provided on the system board with 1% resistors.
Table 2-12. DDR3 and DDR3L Signal Group DC Specifications
Symbol Parameter Min Typ Max Units Notes
1
V
IL
Input Low Voltage 0.43*V
DDQ
V2,
V
IH
Input High Voltage 0.57*V
DDQ
V3, 4
V
OL
Output Low Voltage (V
DDQ
/ 2)* (R
ON
/(R
ON
+R
VTT_TERM
))
V6
V
OH
Output High Voltage V
DDQ
- ((V
DDQ
/ 2)*
(R
ON
/(R
ON
+R
VTT_TERM
))
V4,6
R
ON
Clock Buffer On
Resistance
21 31 5
R
ON
Command Buffer On
Resistance
16 24 5
R
ON
Control Buffer On
Resistance
21 31 5
R
ON
Data Buffer On
Resistance
21 33 5
R
ON
RESET Buffer On
Resistance
553 5
Data ODT
On-Die Termination for
Data Signals
45
90
55
110
7
ParErr ODT
On-Die Termination for
Parity Error bits
90 110
I
LI
Input Leakage Current N/A N/A ± 500 mA
DDR_COMP0 COMP Resistance 99 100 101 8
DDR_COMP1 COMP Resistance 24.65 24.9 25.15 8
DDR_COMP2 COMP Resistance 128.7 130 131.3 8
Table 2-13. PECI Signal DC Electrical Limits (Sheet 1 of 2)
Symbol Definition and Conditions Min Max Units Notes
1
V
In
Input Voltage Range -0.150 V
TTD
+ 0.150 V
V
Hysteresis
Hysteresis 0.100 * V
TTD
V
V
N
Negative-edge threshold voltage 0.275 * V
TTD
0.500 * V
TTD
V2,6
V
P
Positive-edge threshold voltage 0.550 * V
TTD
0.725 * V
TTD
V2,6
R
Pullup
Pullup Resistance
(V
OH
= 0.75 * V
TTD
)
N/A 50
I
Leak+
High impedance state leakage to
V
TTD
(V
leak
= V
OL
)
N/A 50 µA 3