Datasheet

iC-NZN
N-TYPE LASER DIODE DRIVER
Rev C1, Page 6/17
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3...5.5 V, VSY = 0 V...VDD, Tj = -20...125
◦
C, NSLP = hi, CID = lo; unless otherwise stated
Item Symbol Parameter Conditions Unit
No. Min. Typ. Max.
309 Vt()lo Input Threshold Voltage lo at
TTL, REGE, NSLP, AVG, CID
0.8 V
310 Vhys() Hysteresis at TTL, REGE, NSLP,
AVG, CID
140 230 mV
311 Ipu() Pull-Up Current at TTL, REGE V() = 0...VDD − 1.2V -60 -2 µA
312 Ipd() Pull-Down Current at NSLP, AVG,
CID
V() = 1 V...VDD 2 130 µA
313 Vs()hi Saturation voltage hi at SYN Vs(SYN)hi = VSY − V(SYN), I() = -1 mA,
VSY = VDD, EP = TTL = High, EN = open
0.4 V
314 Vs()lo Saturation voltage lo at SYN I() = 1mA, TTL = High, VSY = VDD, EP = Low,
EN = open
0.4 V
315 Isc()hi Short-circuit Current hi at SYN EP = TTL = High, EN = open, V(SYN) = 0 V,
VSY = VDD
-40 -3 mA
316 Isc()lo Short-circuit Current lo at SYN EP = TTL = High, EN = open, V(SYN) = 0 V,
VSY = VDD
3 25 mA
317 I(NERR) Current in NERR V(NERR) > 0.6 V, error 1 20 mA
318 Vs()lo Saturation Voltage lo at NERR I() = 1 mA, error 600 mV
Laser Driver LDK, CI, IMON
401
Vs(LDK)lo Saturation Voltage lo at LDK
I(LDK) = 300 mA, RSI = 680 Ω, VDD=4.5...5.5 V 1.6 3 V
I(LDK) = 100 mA, RSI = 680 Ω VDD=4.5...5.5 V 1.2 2 V
I(LDK) = 60 mA, RSI = 2.5 kΩ VDD=3...3.5 V 0.8 1.3 V
402 Idc(LDK) Permissible DC Current in LDK 300 mA
403 Vo() Permissible Voltage at LDK 12 V
404 C(CI) Required Capacitor at CI 0 10 nF
405
|I(CI)| Charge Current from CI
iC active, REGE = hi, V(CI) = 1 V, CID = 0 V 0 µA
iC active, REGE = hi, V(CI) = 1 V, CID = VDD 20 65 µA
406 Ipd(CI) Pull-Down Current in CI iC active, REGE = lo, CID = hi, V(CI) = 1 V,
VDD = 3...5.5 V
0.3 2.6 µA
407 Imon() Current at IMON V(IMON) = VDD − 0.5 V, I(LDK) < 300 mA,
VDD = 4.5...5.5 V
1/280 1/200 I(LDK)
408 Imin(LDK) Minimum permissible current
pulse
0.5 mA
409
Imax(LDK) Maximum obtainable current from
the driver
V(REGE) = V(TTL) = V(EP) = VDD,
V(MD) = 0 V;
VDD = 4.5...5.5 V, RSI = 680 Ω 300 mA
VDD = 3...4.5 V, RSI = 2.5 kΩ 90 mA
Timing
501 twu Time to Wakeup:
NSLP lo → hi to system enable
CLDA = 1 µF, RSI = 680 Ω 300 µs
502 tr Laser Current Rise Time VDD = 5 V see Fig. 2 1.5 ns
503 tf Laser Current Fall Time VDD = 5 V see Fig. 2 1.5 ns
504 tp Propagation Delay
V(EPx, ENx) → I(LDKx)
VDD = 5 V 10 ns