Datasheet

iC-WJB
2.7 V LASER DIODE DRIVER
Rev E1, Page 4/12
ELECTRICAL CHARACTERISTICS
Operating Conditions: VCC = 2.7...6 V, RSET = 2.7...27 kΩ, I(AMD) = 0.15...1.5 mA, Tj = -25...125 °C, unless otherwise noted.
Item Symbol Parameter Conditions Unit
No. Min. Typ. Max.
Total Device
001 VCC Permissible Supply Voltage
Range
2.7 6 V
002 Idc(VCC) Supply Current in VCC RSET = 5 kΩ, IN = hi, Idc(KLD) = 40 mA 4 7 13 mA
003 I0(VCC) Standby Supply Current in VCC REST= 5 kΩ, IN = lo, Tj = 27°C 5 mA
004 Iav(VCC) Supply Current in VCC (average
value)
Ipk(KLD) = 80 mA, f(IN) = 200 kHz ±20 %,
twhi / twlo = 1
9 15 mA
005 tp(IN-KLD) Delay Time Pulse Edge V(IN) to
I(KLD)
IN(hi ↔ lo), V(50%) : I(50 %) 65 135 ns
006 Pcon Power Consumption VCC = 3V, V(KLD) ≈ 0.6 V, RSET = 5 kΩ,
Idc(KLD) = 40 mA
50 mW
007
Vc()hi Clamp Voltage hi at VCC, IN,
AMD, KLD, CI, CWD, ISET
I() = 2 mA, other pins open 6.2 10 V
Tj = 27 °C 7.5 V
Driver
101
Vs(KLD) Saturation Voltage at KLD
IN = hi, I(KLD) = 80 mA 0.3 V
Tj = 27 °C 0.11 V
102 Vs(KLD) Saturation Voltage at KLD IN = hi, I(KLD) = 100 mA 0.4 V
103 I0(KLD) Leakage Current in KLD IN = lo, V(KLD) = VCC 10 µA
104
V(AMD) Voltage at AMD
I(AMD) = 1.5 mA 0.4 1.0 V
Tj = 27 °C 0.84 V
105
tr Current Rise Time in KLD
Imax(KLD) = 20...80 mA, Ip(): 10 → 90 % 100 ns
Tj = 27 °C 30 ns
106
tf Current Fall Time in KLD
Imax(KLD) = 20...80 mA, Ip(): 90 % → 10% 100 ns
Tj = 27 °C 20 ns
107
CR1() Current Ratio I(AMD)/I(ISET)
I(CI) = 0, closed control loop;
RSET = 2.7..27 kΩ 2.4 3 3.8
RSET = 27..330 kΩ 2.4 3.6 5.4
108 CR2() Current Ratio I(AMD)/I(CI) V(CI) = 1...2 V, ISET open 2.7 3 3.3
109
TC1() Temperature Coefficient of
Current Ratio I(AMD)/I(ISET)
I(CI) = 0, closed control loop;
RSET = 2.7...27 kΩ 0.01 % / °C
RSET = 27...330 kΩ -0.1 -0.25 % / °C
Input IN
201 Vt()hi Threshold hi 45 70 %VCC
202 Vt()lo Threshold lo 40 65 %VCC
203
Vt()hys Hysteresis
20 mV
Tj = 27 °C 65 mV
204
Rin Pull-Down Resistor
V(IN) = -0.3 V...VCC 4 16 kΩ
Tj = 27 °C 10 kΩ
205 V0() Open-loop Voltage I(IN) = 0 0.1 V
Reference und Thermal Shutdown
301
V(ISET) Voltage at ISET
1.16 1.28 V
Tj = 27 °C 1.22 V
302 CR() Current Ratio I(CI)/I(ISET) V(CI) = 1...2 V, I(AMD) = 0 0.9 1 1.12
303 RSET Permissible Resistor at ISET
(Control Set-up Range)
2.7 330 kΩ
304 Toff Thermal Shutdown Threshold 125 150 °C
305 Thys Thermal Shutdown Hysteresis 10 40 °C
Power-Down and Watchdog
401
VCCon Turn-on Threshold VCC
2.4 2.7 V
Tj = 27 °C 2.6 V
402
VCCoff Undervoltage Threshold at VCC
2.3 2.63 V
Tj = 27 °C 2.5 V
403 VCChys Hysteresis VCChys = VCCon − VCCoff 70 100 150 mV
404 Vs(CI)off Saturation Voltage at CI with
undervoltage
I(CI) = 300 µA, VCC < VCCoff 1.5 V