Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsAUIRF2907Z, MOSFET

AUIRF2907Z

07/23/2010

www.irf.com 1

AUTOMOTIVE GRADE

HEXFET

Power MOSFET

PD - 97545

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to

Tjmax

● Lead-Free, RoHS Compliant

● Automotive Qualified *

Description

Specifically designed for Automotive applications, this

HEXFET

Power MOSFET utilizes the latest process-

ing techniques to achieve extremely low on-resistance

per silicon area. Additional features of this design are

a 175°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating . These

features combine to make this design an extremely

efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

GDS

Gate Drain Source

TO-220AB

AUIRF2907Z

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

) is 25°C, unless otherwise specified.

HEXFET

is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Parameter Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V (Silicon Limited)

@ T

= 100°C

Continuous Drain Current, V

@ 10V (Silicon Limited)

@ T

= 25°C

Continuous Drain Current, V

@ 10V

(Package Limited)

Pulsed Drain Current

= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

(tested)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

°C

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ. Max. Units

θJC

Junction-to-Case

–––

0.50

θCS

Case-to-Sink, Flat, Greased Surface

0.50 ––– °C/W

θJA

Junction-to-Ambient

––– 62

Max.

170

120

680

10 lbf•in (1.1N•m)

300

2.0

± 20

270

690

See Fig.12a,12b,15,16

300

-55 to + 175

(BR)DSS

75V

DS(on)

max.

4.5m

Ω

D (Silicon Limited)

170A

D (Package Limited)

75A

Summary of content (12 pages)

PAGE 1
PD - 97545 AUTOMOTIVE GRADE AUIRF2907Z HEXFET® Power MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S V(BR)DSS 75V RDS(on) max. 4.
PAGE 2
AUIRF2907Z Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 75 ––– ––– 2.0 180 ––– ––– ––– ––– ––– 0.069 3.5 ––– ––– ––– ––– ––– ––– ––– ––– 4.5 4.
PAGE 3
AUIRF2907Z Qualification Information† Automotive (per AEC-Q101) †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level.
PAGE 4
AUIRF2907Z 1000 10000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 100 4.5V 10 4.5V ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 0.1 1 10 10 0.1 100 Fig 1. Typical Output Characteristics 100 200 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (Α) 10 Fig 2.
PAGE 5
nce AUIRF2907Z 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 90A C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss Coss Crss 1000 100 VDS= 60V VDS= 38V 10.0 VDS= 15V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 100 150 200 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs.
PAGE 6
AUIRF2907Z 180 160 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 Limited By Package ID, Drain Current (A) 140 120 100 80 60 40 20 0 ID = 90A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 -60 -40 -20 0 T C , Case Temperature (°C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 0.1 R1 R1 0.05 τJ 0.02 0.
PAGE 7
AUIRF2907Z EAS , Single Pulse Avalanche Energy (mJ) 1200 15V ID TOP 9.0A 13A BOTTOM 75A 1000 DRIVER L VDS D.U.T RG + V - DD IAS 20V VGS tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS 800 600 400 200 0 tp 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG Charge Fig 13a.
PAGE 8
AUIRF2907Z 100 Avalanche Current (A) 0.01 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.05 0.10 10 1 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 250 200 150 100 50 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs.
PAGE 9
AUIRF2907Z D.U.T Driver Gate Drive + - P.W. + * D.U.T. ISD Waveform Reverse Recovery Current + RG V DD • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period + Body Diode Forward Current di/dt D.U.T.
PAGE 10
AUIRF2907Z TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF2907Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.
PAGE 11
AUIRF2907Z Ordering Information Base part AUIRF2907Z www.irf.
PAGE 12
AUIRF2907Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice.