Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsAUIRF540Z, MOSFET

07/20/10

www.irf.com 1

PD - 96326

HEXFET

Power MOSFET

AUIRF540Z

AUIRF540ZS

Pak

AUIRF540ZS

TO-220AB

AUIRF540Z

AUTOMOTIVE GRADE

Features

l Advanced Process Technology

l Ultra Low On-Resistance

l 175°C Operating Temperature

l Fast Switching

l Repetitive Avalanche Allowed up to Tjmax

l Lead-Free, RoHS Compliant

l Automotive Qualified *

Description

Specifically designed for Automotive applications, this

HEXFET

Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a wide

variety of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

) is 25°C, unless otherwise specified.

GDS

Gate Drain Source

HEXFET

is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

(BR)DSS

100V

DS(on)

typ.

21m

Ω

max.

26.5m

Ω

36A

Parameter Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

@ T

= 100°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

= 25°C

Power Dissipation W

Linear Derating Factor W/°C

Gate-to-Source Voltage V

Single Pulse Avalanche Energy (Thermally limited)

(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current A

Repetitive Avalanche Energy mJ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.64

θCS

Case-to-Sink, Flat Greased Surface 0.50 –––

θJA

Junction-to-Ambient ––– 62

θJA

Junction-to-Ambient (PCB Mount) ––– 40

-55 to + 175

300(1.6mm from case)

10 lbf

in (1.1N m)

0.61

± 20

Max.

140

120

See Fig.12a, 12b, 15, 16

°C

°C/W

Summary of content (14 pages)

PAGE 1
PD - 96326 AUTOMOTIVE GRADE Features l l l l l l l AUIRF540Z AUIRF540ZS HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS 100V RDS(on) typ. 21mΩ max. 26.
PAGE 2
AUIRF540Z/S Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 100 ––– ––– 2.0 36 ––– ––– ––– ––– ––– 0.093 21 ––– ––– ––– ––– ––– ––– ––– ––– 26.5 4.
PAGE 3
AUIRF540Z/S Qualification Information† Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level.
PAGE 4
AUIRF540Z/S 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 4.5V 1 0.1 1 60µs PULSE WIDTH Tj = 25°C 10 100 BOTTOM 4.5V 10 60µs PULSE WIDTH Tj = 175°C 1 100 0.1 0 VDS, Drain-to-Source Voltage (V) 10 10 100 100 Fig 2. Typical Output Characteristics 80 100 Gfs, Forward Transconductance (S) 1000 ID, Drain-to-Source Current (Α) 11 VDS, Drain-to-Source Voltage (V) Fig 1.
PAGE 5
AUIRF540Z/S 3000 20 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 2500 C, Capacitance (pF) C oss = C ds + C gd 2000 Ciss 1500 1000 500 Coss Crss ID= 22A VDS= 80V VDS= 50V VDS= 20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 20 30 40 50 60 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.
PAGE 6
AUIRF540Z/S 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID , Drain Current (A) 40 30 20 10 2.5 ID = 22A VGS = 10V 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) T J , Junction Temperature (°C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.
PAGE 7
AUIRF540Z/S DRIVER L VDS D.U.T RG + V - DD IAS 20V VGS tp A 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 180 15V ID 8.3A 14A BOTTOM 20A 160 TOP 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.0 VG Charge Fig 13a.
PAGE 8
AUIRF540Z/S 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.
PAGE 9
AUIRF540Z/S D.U.T Driver Gate Drive + - - P.W. Period * D.U.T. ISD Waveform Reverse Recovery Current + • dv/dt controlled by R G • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer RG Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T.
PAGE 10
AUIRF540Z/S TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF540Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.
PAGE 11
AUIRF540Z/S D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information Part Number AUIRF540ZS YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.
PAGE 12
AUIRF540Z/S D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2.
PAGE 13
AUIRF540Z/S Ordering Information Base part AUIRF540Z AUIRF540ZS www.irf.
PAGE 14
AUIRF540Z/S IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice.