Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsAUIRFB8409, MOSFET

HEXFET

Power MOSFET

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T

) is 25°C, unless otherwise specified.

HEXFET

is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per silicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These features combine to make

this design an extremely efficient and reliable device for use

in Automotive applications and wide variety of other

applications.

Features

l Advanced Process Technology

l New Ultra Low On-Resistance

l 175°C Operating Temperature

l Fast Switching

l Repetitive Avalanche Allowed up to Tjmax

l Lead-Free, RoHS Compliant

l Automotive Qualified *

Applications

l Electric Power Steering (EPS)

l Battery Switch

l Start/Stop Micro Hybrid

l Heavy Loads

l DC-DC Applications

GDS

Gate Drain Source

Pak

AUIRFS8409

TO-262

AUIRFSL8409

TO-220AB

AUIRFB8409

DSS

40V

DS(on)

(SMD) typ. 0.97mΩ

max. 1.2mΩ

(Silicon Limited)

409A

(Package Limited)

195A

Symbol Parameter Units

@ T

= 25°C Continuous Drain Current, V

@ 10V (Silicon Limited)

@ T

= 100°C Continuous Drain Current, V

@ 10V (Silicon Limited)

@ T

= 25°C Continuous Drain Current, V

@ 10V (Package Limited)

Pulsed Drain Current

= 25°C Maximum Power Dissipation W

Linear Derating Factor

W/°C

Gate-to-Source Voltage V

Single Pulse Avalanche Energy (Thermally Limited)

(

tested

)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

760

1360

See Fig. 14, 15, 24a, 24b

375

10lbf

in (1.1N m)

°C

300

-55 to + 175

± 20

2.5

Max.

409

289

1524

195

AUIRFB8409

AUIRFS8409

AUIRFSL8409

AUTOMOTIVE GRADE

Base part number Package Type Orderable Part Number

Form Quantit

AUIRFB8409 TO-220 Tube 50 AUIRFB8409

AUIRFS8409 D2-Pak Tube 50 AUIRFS8409

AUIRFS8409 D2-Pak Tape and Reel Left 800 AUIRFS8409TRL

AUIRFSL8409 TO-262 Tube 50 AUIRFSL8409

Standard Pack

Summary of content (14 pages)

PAGE 1
AUIRFB8409 AUIRFS8409 AUIRFSL8409 AUTOMOTIVE GRADE HEXFET® Power MOSFET Features l l l l l l l Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
AUIRFB/S/SL8409 Thermal Resistance Symbol Parameter Typ. Max. Units ––– 0.40 °C/W Case-to-Sink, Flat Greased Surface 0.50 ––– Junction-to-Ambient (PCB Mount) ––– 62 R θJC Junction-to-Case R θCS R θJA kl j Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) SMD RDS(on) TO-220 VGS(th) IDSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
AUIRFB/S/SL8409 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V 10 4.5V BOTTOM 100 4.5V ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2.
PAGE 4
AUIRFB/S/SL8409 10000 T J = 175°C 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 10 T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 1msec 100 10 1 0.1 0.0 0.5 1.0 1.5 2.0 0.1 2.5 Limited By Package 300 200 100 0 50 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 500 25 10 100 Fig 8. Maximum Safe Operating Area Fig 7.
PAGE 5
AUIRFB/S/SL8409 Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13.
PAGE 6
.0 4.0 ID = 100A VGS(th), Gate threshold Voltage (V) RDS(on), Drain-to -Source On Resistance (m Ω) AUIRFB/S/SL8409 4.0 T J = 125°C 2.0 T J = 25°C 0.0 3.5 3.0 2.5 ID = 250µA ID = 1.0mA ID = 1.0A 2.0 1.5 1.0 4 6 8 10 12 14 16 18 20 -75 -50 -25 VGS, Gate -to -Source Voltage (V) Fig 16. On-Resistance vs. Gate Voltage 25 50 75 100 125 150 175 Fig 17. Threshold Voltage vs.
PAGE 7
RDS(on), Drain-to -Source On Resistance ( mΩ) AUIRFB/S/SL8409 6.0 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V 4.0 VGS =10V 2.0 0.0 0 200 400 600 800 1000 1200 ID, Drain Current (A) Fig 22. Typical On-Resistance vs. Drain Current 7 www.irf.
PAGE 8
AUIRFB/S/SL8409 Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T.
PAGE 9
AUIRFB/S/SL8409 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRFB8409 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.
PAGE 10
AUIRFB/S/SL8409 TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRFSL8409 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.
PAGE 11
AUIRFB/S/SL8409 D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information Part Number AUIRFS8409 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.
PAGE 12
AUIRFB/S/SL8409 D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.
PAGE 13
AUIRFB/S/SL8409 † Qualification Information Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level.
PAGE 14
AUIRFB/S/SL8409 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice.