Datasheet

INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
AUIRGPS4067D1
1 www.irf.com
09/27/2012
V
CES
= 600V
I
C
= 160A, T
C
= 100°C
t
SC
6μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.70V
Features
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
6μs SCSOA
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (on)
Temperature Coefficient
Soft Recovery Co-pak Diode
Lead-Free, RoHS Compliant
Automotive Qualified *
Benefits
High Efficiency in a Wide Range of Applications
Suitable for Applications in the Low to Mid-Rrange
Frequencies
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
G
C
E
Gate Collector Emitter
Super-247
AUIRGPS4067D1
G
C
E
C
E
G
n-channel
C
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C
Continuous Collector Current
240
I
C
@ T
C
= 100°C
Continuous Collector Current 160
I
NOMINAL
Nominal Current
120
I
CM
Pulse Collector Current, V
GE
= 15V 360
I
LM
Clamped Inductive Load Current, V
GE
= 20V 480 A
I
F
NOMINA L
Diode Nominal Current 120
I
FM
Diode Maximum Forward Current
480
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C
Maximum Power Dissipation 750 W
P
D
@ T
C
= 100°C
Maximum Power Dissipation 375
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
JC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
––– ––– 0.20
R
JC
(Diode)
Thermal Resistance Junction-to-Case-(each Diode)
––– ––– 0.44 °C/W
R
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
PD - 97726C

Summary of content (13 pages)