Datasheet

AUIRGPS4067D1
2 www.irf.com
Notes:
 V
CC
= 80% (V
CES
), V
GE
= 20V, L = 0.87μH, R
G
= 50tested in production I
LM
400A.
 Pulse width limited by max. junction temperature.
 Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
 R

is measured at T
J
of approximately 90°C.
 Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is120A. Note that current limitations arising from heating of the device leads may occur.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter B reakdown Vol tage
600 — — V V
GE
= 0V, I
C
= 500μA

V
(B R )CE S
/

T
J
T emper atur e Coeff . of B r eak down Vol t age
—0.27—V/°CV
GE
= 0V, I
C
= 15mA (25°C-175°C)
—1.702.05 I
C
= 120A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.15 — V I
C
= 120A, V
GE
= 15V, T
J
= 150°C
—2.20— I
C
= 120A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 5.6mA

V
GE ( t h)
/

TJ
Threshold Voltage temp. coefficient — -17 — mV/°C V
CE
= V
GE
, I
C
= 20mA (25°C - 175°C)
gfe Forward Transconductance — 85 — S V
CE
= 50V, I
C
= 120A
I
CES
Collector-to-Emitter Leakage Current — 2.3 200 μAV
GE
= 0V, V
CE
= 600V
—9.4—mAV
GE
= 0V, V
CE
= 600V, T
J
= 175°C
—1.92.2 I
F
= 120A
—2.0— I
F
= 120A, T
J
= 175°C
I
GE S
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 240 360 I
C
= 120A
Q
ge
Gate-to-Emitter Charge (turn-on) — 69 104 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 90 135 V
CC
= 400V
E
on
Turn-On Switching Loss — 8.2 10 I
C
= 120A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 2.9 3.2 mJ R
G
= 4.7, L = 87μH, T
J
= 25°C
E
total
Total Switching Loss — 11.1 13.2
E ner gy lo s s es incl ude t ai l & di o de r ev er s e r eco v er y
t
d(on)
Turn-On delay time — 69 82 I
C
= 120A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 65 82 ns R
G
= 4.7

, L = 87μH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 198 230
t
f
Fall time — 38 48
E
on
Turn-On Switching Loss — 10 — I
C
= 120A, V
CC
= 400V, V
GE
=15V
E
off
Turn-Off Switching Loss — 3.8 — mJ R
G
= 4.7, L = 87μH, T
J
= 175°C
E
total
Total Switching Loss — 13.8 —
E ner gy lo s s es incl ude t ai l & di o de r ev er s e r eco v er y
t
d(on)
Turn-On delay time — 63 — I
C
= 120A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 64 — ns R
G
= 4.7

, L = 200μH
t
d(off)
Turn-Off delay time — 230 — T
J
= 175°C
t
f
Fall time — 51 —
C
ies
Input Capacitance — 7780 — pF V
GE
= 0V
C
oes
Output Capacitance — 505 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 245 — f = 1.0Mhz
T
J
= 175°C, I
C
= 480A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp =600V
Rg = 4.7

, V
GE
= +20V to 0V
SCSOA Short Circuit Safe Operating Area 6 — — μsV
CC
= 400V, Vp =600V
Rg = 1.0, V
GE
= +15V to 0V
Erec Reverse Recovery Energy of the Diode — 2440 — μJT
J
= 175°C
t
rr
Diode Reverse Recovery Time — 360 — ns V
CC
= 400V, I
F
= 120A
I
rr
Peak Reverse Recovery Current — 53 — A V
GE
= 15V, Rg = 4.7, L =87μH
Conditions
Diode Forward Voltage DropV
FM
V