Datasheet

AUIRGPS4067D1
www.irf.com 5
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 30μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 30μs
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
0 1 2 3 4 5 6 7 8 9 10
V
CE
(V)
0
60
120
180
240
300
360
420
480
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0 4.0 5.0
V
F
(V)
0
60
120
180
240
300
360
420
480
I
F
(
A
)
T
J
= -40°C
T
J
= 25°C
T
J
=175°C
0246810121416
V
GE,
Gate-to-Emitter Voltage (V)
0
60
120
180
240
300
360
420
480
I
C
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
T
J
= -40°C
T
J
= 25°C
T
J
= 175°C
5 101520
V
GE
(V)
0
2
4
6
8
10
V
C
E
(
V
)
I
CE
= 60A
I
CE
= 120A
I
CE
= 195A
5 101520
V
GE
(V)
0
2
4
6
8
10
V
C
E
(
V
)
I
CE
= 60A
I
CE
= 120A
I
CE
= 195A
5 101520
V
GE
(V)
0
2
4
6
8
10
V
C
E
(
V
)
I
CE
= 60A
I
CE
= 120A
I
CE
= 195A