Datasheet

AUIRGPS4067D1
www.irf.com 7
Fig. 19 - Typ. Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; I
F
= 120A; T
J
= 175°C
Fig. 20 - Typ. Diode Q
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 23 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge vs. V
GE
I
CE
= 120A
Fig. 21 - Typ. Diode E
RR
vs. I
F
T
J
= 175°C
Fig. 22 - V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
200 400 600 800 1000 1200 1400
di
F
/dt (A/μs)
30
35
40
45
50
55
60
I
R
R
(
A
)
200 400 600 800 1000 1200 1400 1600
di
F
/dt (A/μs)
5000
10000
15000
20000
25000
30000
35000
Q
R
R
(
n
C
)
10
2
50
4.7
120A
240A
60A
0 50 100 150 200 250 300 350
I
F
(A)
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
E
n
e
r
g
y
(
μ
J
)
R
G
= 10

R
G
= 20

R
G
= 4.7

R
G
= 50

8 1012141618
V
GE
(V)
4
6
8
10
12
14
16
18
T
i
m
e
(
μ
s
)
200
300
400
500
600
700
800
900
C
u
r
r
e
n
t
(
A
)
T
sc
I
sc
0 100 200 300 400 500
V
CE
(V)
10
100
1000
10000
100000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 50 100 150 200 250
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 400V
V
CES
= 300V