Datasheet

2007-04-19
1
BAR1.../BAR61...
Silicon PIN Diode
RF switch, RF attenuator for frequencies
above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BAR61BAR16-1BAR14-1 BAR15-1
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Type Package Configuration L
S
(nH) Marking
BAR14-1
BAR15-1
BAR16-1
BAR61
SOT23
SOT23
SOT23
SOT143
series
common cathode
common anode
PI element
1.8
1.8
1.8
2
L7s
L8s
L9s
61s
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Diode reverse voltage V
R
100 V
Forward current I
F
140 mA
Total power dissipation
T
S
65°C
P
tot
250 mW
Junction temperature T
j
150 °C
Operating temperature range T
op
-55 ... 125
Storage temperature T
st
g
-55 ... 150
Thermal Resistance
Parameter
Symbol Value Unit
Junction - soldering point
1)
R
thJS
340
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance

Summary of content (7 pages)