Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsDiodesBAR 65-03 W HF Diode Case type SOD 323 I(F) voltage:100 mA

2011-06-14

BAR65...

Silicon PIN Diode

• Series diode for mobile communication in

low loss transmit-receiver switches

• Band switch for TV-tuners

• Very low forward resistance (typ. 0.65 Ω @ 5 mA)

• Low capacitance (typ. 0.5 pF @ 0V)

• Fast switching applications

• Pb-free (RoHS compliant) package

BAR65-02L

BAR65-02V

BAR65-03W



Type Package Configuration L

(nH) Marking

BAR65-02L*

BAR65-02V

BAR65-03W

TSLP-2-1

SC79

SOD323

single, leadless

single

0.4

0.6

1.8

blue M

* Preliminary Data

Maximum Ratings at T

= 25°C, unless otherwise specified

Parameter

Symbol Value Unit

Diode reverse voltage V

30 V

Forward current I

100 mA

Total power dissipation

BAR65-02L, T

≤ 128°C

BAR65-02V, T

≤ 118°C

BAR65-03W, T

≤ 113°C

tot

250

Junction temperature T

150 °C

Operating temperature range T

-55 ... 125

Storage temperature T

-55 ... 150

Summary of content (12 pages)

PAGE 1
BAR65... Silicon PIN Diode • Series diode for mobile communication in low loss transmit-receiver switches • Band switch for TV-tuners • Very low forward resistance (typ. 0.65 Ω @ 5 mA) • Low capacitance (typ. 0.5 pF @ 0V) • Fast switching applications • Pb-free (RoHS compliant) package BAR65-02L BAR65-02V BAR65-03W Type BAR65-02L* BAR65-02V BAR65-03W Package TSLP-2-1 SC79 SOD323 Configuration single, leadless single single LS(nH) 0.4 0.6 1.
PAGE 2
BAR65... Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit K/W BAR65-02L ≤ 90 BAR65-02V ≤ 130 BAR65-03W ≤ 145 Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. IR - - 20 nA VF - 0.
PAGE 3
BAR65... Electrical Characteristics at T A = 25°C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. AC Characteristics pF CT Diode capacitance VR = 1 V, f = 1 MHz - 0.45 0.9 VR = 3 V, f = 1 MHz - 0.4 0.8 VR = 0 V, f = 100 MHz ... 1.8 GHz - 0.5 kΩ RP Reverse parallel resistance VR = 0 V, f = 100 MHz - 700 - VR = 0 V, f = 1 GHz - 10 - VR = 0 V, f = 1.8 GHz - 5 Ω rf Forward resistance IF = 1 mA, f = 100 MHz - 1 - IF = 5 mA, f = 100 MHz - 0.65 0.
PAGE 4
BAR65... Diode capacitance CT = ƒ (VR) Reverse parallel resistance RP = ƒ(VR) f = Parameter f = Parameter 10 4 0.5 KOhm 100 MHz F 10 3 1 MHz ... 1.8 GHz Rp CT 0.4 0.35 10 2 1 GHz 1.8 GHz 0.3 10 1 0.25 0.2 10 0 0.15 0.
PAGE 5
BAR65...
PAGE 6
BAR65... Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR65-02L IFmax / IFDC = ƒ (t p) BAR65-02L 10 2 10 1 RthJS IFmax/IFDC K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.
PAGE 7
BAR65... Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load BAR65-03W IFmax / IFDC = ƒ (t p) BAR65-03W 10 1 3 10 IFmax/IFDC mA IF 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 mA 0.5 0.2 0.1 0.05 0.02 0.01 0.
PAGE 8
Package SC79 8 BAR65...
PAGE 9
BAR65...
PAGE 10
Package SOD323 10 BAR65...
PAGE 11
Package TSLP-2-1 11 BAR65...
PAGE 12
BAR65... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.