BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BC846PN BC846UPN BC847PN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177 Type Marking Pin Configuration BC846PN 1Os 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 BC846UPN 1Os 1=E1 2=B1 3=C2 4=E2 5=B2
BC846PN/UPN_BC847PN Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC846PN/UPN 65 BC847PN 45 Collector-emitter voltage Unit VCES BC846PN/UPN 80 BC847PN 50 Collector-base voltage VCBO BC846PN/UPN 80 BC847PN 50 6 Emitter-base voltage VEBO Collector current IC 100 Peak collector current, tp ≤ 10 ms ICM 200 Total power dissipation- Ptot mW TS ≤ 115°C, BC846PN, BC847PN 250 TS ≤ 118°C, BC846UPN 250 Junction temperature Tj Storage temperature Tstg
BC846PN/UPN_BC847PN Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max.
BC846PN/UPN_BC847PN Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. fT - 250 - MHz Ccb - 1.5 - pF Ceb - 8 - h11e - 4.5 - kΩ h12e - 2 - 10-4 h21e - 330 - - h22e - 30 - µS AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.
BC846PN/UPN_BC847PN DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage VCE = 5 V IC = ƒ(VCEsat ), hFE = 20 EHP00365 10 3 h FE 5 100 C EHP00367 10 2 mA ΙC 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 0 10 -1 mA 10 2 0 0.1 0.2 0.4 0.3 ΙC V 0.
BC846PN/UPN_BC847PN Transition frequency fT = ƒ(IC) VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00363 10 3 12 pF MHz 5 10 CCB(CEB ) fT 9 8 7 10 2 6 5 5 4 CEB 3 2 CCB 1 10 1 10 -1 5 10 0 5 10 1 mA 0 0 10 2 4 8 12 16 V ΙC Total power dissipation P tot = ƒ(TS) Total power dissipation P tot = ƒ(TS) BC846PN, BC847PN BC846UPN 300 300 mW mW 250 250 225 225 200 200 Ptot Ptot 22 VCB(VEB 175 175 150 150 125
BC846PN/UPN_BC847PN Permissible Pulse Load RthJS = ƒ(tp) Permissible Pulse Load BC846PN, BC847PN Ptotmax/PtotDC = ƒ(tp ) BC846PN, BC847PN 10 3 10 3 Ptotmax/PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.
Package SC74 BC846PN/UPN_BC847PN Package Outline B 1.1 MAX. 1 2 3 0.35 +0.1 -0.05 Pin 1 marking 0.2 B 6x M A 0.1 MAX. 0.95 0.2 1.9 1.6 ±0.1 4 10˚ MAX. 5 2.5 ±0.1 6 0.25 ±0.1 0.15 +0.1 -0.06 (0.35) 10˚ MAX. 2.9 ±0.2 (2.25) M A Foot Print 2.9 1.9 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible.
Package SOT363 BC846PN/UPN_BC847PN Package Outline 2 ±0.2 0.9 ±0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.
BC846PN/UPN_BC847PN Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
