BC847...-BC850... NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC857...-BC860...
BC847...-BC850... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC847..., BC850... 45 BC848..., BC849... 30 Collector-emitter voltage Unit VCES BC847..., BC850... 50 BC848..., BC849... 30 Collector-base voltage VCBO BC847..., BC850... 50 BC848..., BC849... 30 Emitter-base voltage VEBO BC847..., BC850... 6 BC848..., BC849...
BC847...-BC850... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC847..., BC850... 45 - - IC = 10 mA, IB = 0 , BC848..., BC849... 30 - - IC = 10 µA, IE = 0 , BC847..., BC850... 50 - - IC = 10 µA, IE = 0 , BC848..., BC849...
BC847...-BC850... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. fT - 250 - MHz Ccb - 0.95 - pF Ceb - 9 - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance h11e kΩ IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A - 2.7 - IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B - 4.
BC847...-BC850... DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage VCE = 5 V IC = ƒ(VCEsat ), hFE = 20 EHP00365 10 3 h FE 5 100 C EHP00367 10 2 ΙC mA 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 0 10 -1 mA 10 2 0 0.1 0.2 0.4 0.3 ΙC V 0.
BC847...-BC850...
BC847...-BC850... Total power dissipation P tot = ƒ(TS) Permissible Pulse Load BC847W-BC850W Ptotmax/PtotDC = ƒ(tp ) BC847/W-BC850/W 300 EHP00362 10 3 mW Ptot max Ptot DC 250 D= tp tp T T Ptot 225 10 2 200 175 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.
BC847...-BC850... Noise figure F = ƒ(VCE) Noise figure F = ƒ(f) IC = 0.2mA, RS = 2kΩ , f = 1kHz IC = 0.2 mA, VCE = 5V, RS = 2 kΩ 20 F BC 846...850 EHP00370 20 BC 846...850 EHP00371 dB dB F 15 15 10 10 5 5 0 10 -1 5 10 0 10 1 V 0 10 -2 10 2 10 -1 10 0 10 1 VCE f Noise figure F = ƒ(IC ) Noise figure F = ƒ(IC ) VCE = 5V, f = 120Hz VCE = 5V, f = 1kHz 20 BC 846...850 kHz 10 2 EHP00372 20 BC 846...
BC847...-BC850... Noise figure F = ƒ(IC ) VCE = 5V, f = 10kHz 20 BC 846...
Package SOT23 BC847...-BC850... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.
Package SOT323 BC847...-BC850... Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.
Package TSLP-3-1 BC847...-BC850... Package Outline Bottom view 0.4 +0.1 0.6 ±0.05 0.5 ±0.035 2 1 ±0.05 3 0.65 ±0.05 3 1) 2 1 1) 0.05 MAX. 0.35 ±0.05 Pin 1 marking 2 x 0.15 ±0.035 2 x 0.25 ±0.035 1 0.25 ±0.035 1) Top view 1) 1) Dimension applies to plated terminal Foot Print R0.1 0.2 0.225 0.2 0.225 0.315 0.35 1 0.3 0.945 0.35 0.45 0.275 0.6 0.355 For board assembly information please refer to Infineon website "Packages" 0.17 0.
BC847...-BC850... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.