Datasheet

BCP28, BCP48
1 Nov-29-2001
PNP Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCP29/49 (NPN)
VPS05163
1
2
3
4
EHA00008
B(1)
E(3)
C(2,4)
Type Marking Pin Configuration Package
BCP28
BCP48
BCP 28
BCP 48
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
4 = C
4 = C
SOT223
SOT223
Maximum Ratings
Parameter
Symbol
BCP28 BCP48
Unit
Collector-emitter voltage
V
CEO
30 60 V
Collector-base voltage
V
CBO
40 80
Emitter-base voltage
V
EBO
10 10
DC collector current
I
C
500 mA
800 mAPeak collector current
I
CM
Base current
I
B
100
Peak base current
I
BM
200
W1.5
Total power dissipation, T
S
= 124 °C P
tot
Junction temperature 150 °C
T
j
-65 ... 150Storage temperature
T
st
g
Thermal Resistance
Junction - soldering point
1)
R
thJS
17 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance