Datasheet

2007-05-29
1
BCR400W
Active Bias Controller
Characteristics
Supplies stable bias current even at low battery
voltage and extreme ambient temperature variatio
n
Low voltage drop of 0.7V
Application notes
Stabilizing bias current of NPN transistors
and FET's from less than 0.2mA up to
more than 200mA
Ideal supplement for Sieget and other transistors
also usable as current source up to 5mA
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
1
2
3
4
EHA07188
4 3
21
Type Marking Pin Configuration Package
BCR400W W4s
1=GND/E
NPN
2=Contr/B
NPN
3V
S
4=Rext/C
NPN
SOT343
(E
NPN
, B
NPN
, C
NPN
are electrodes of a stabilized NPN transistor)
Maximum Ratings
Parameter Symbol Value Unit
Source voltage V
S
18 V
Control current I
Contr.
10 mA
Control voltage V
Contr.
16 V
Reverse voltage between all terminals V
R
0.5
Total power dissipation, T
S
= 117 °C
P
tot
330 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
100 K/W
1
Pb-containing package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance

Summary of content (9 pages)