Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsBF999, MOSFET BF 999 N channel SOT 23 20V

2007-04-20

BF999

Silicon N-Channel MOSFET Triode

• For high-frequency stages up to 300 MHz

preferably in FM applications

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BF999 LBs 1=G 2=D 3=S - - - SOT23

Maximum Ratings

Parameter

Symbol Value Unit

Drain-source voltage V

20 V

Continuous drain current I

30 mA

Gate-source peak current ± I

GSM

10 mA

Total power dissipation

≤ 76 °C

tot

200 mW

Storage temperature T

stg

-55 ... 150

°C

Channel temperature T

150

Thermal Resistance

Parameter

Symbol Value Unit

Channel - soldering point

thchs

≤ 370

K/W

Pb-containing package may be available upon special request

For calculation of R

thJA

please refer to Application Note Thermal Resistance

Summary of content (6 pages)

PAGE 1
BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S - - Package - SOT23 Maximum Ratings Parameter Symbol Drain-source voltage VDS 20 V Continuous drain current ID 30 mA Gate-source peak current ± IGSM 10 mA Total powe
PAGE 2
BF999 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)DS 20 - - ±V(BR)GSS 6.5 - 12 ± IGSS - - 50 nA IDSS 5 10 16 mA -VGS(p) - 0.8 1.
PAGE 3
BF999 Total power dissipation Ptot = ƒ(TS) Output characteristics ID = ƒ(V DS) 250 18 mA 0.3V 14 0.2V 12 0.1V 10 0V ID P tot mW 150 -0.1V 8 100 -0.2V 6 -0.3V 4 50 -0.4V 2 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 5 10 TS 20 VDS Gate transconductance gfs = ƒ(V GS) Drain current ID = (V GS) 30 30 mS mA 20 20 ID Gfs V 15 15 10 10 5 5 0 -1 -0.5 0 0.5 V 0 -1 1.
PAGE 4
BF999 Gate input capacitance Cgss = ƒ(VGS) Output capacitance C dss = ƒ(VDS) 3 pF CdSS CgSS 3 1 0 -2 pF 1 -1 V 0 0 1 VGS 5 V 15 VDS 4 2007-04-20
PAGE 5
Package SOT23 BF999 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.
PAGE 6
BF999 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).