Datasheet

Data Sheet 1 05.99
SIPMOS

Small-Signal-Transistor
Features
• Single N channel
• Enhancement mode
• Avalanche rated
• Logic Level
• d
v /d t rated
Product Summary
Drain source voltage
V
DS
30 V
Drain-Source on-state resistance
R
DS(on)
0.03
Ω
Continuous drain current
I
D
6.4 A
Type Package Ordering Code
BSO 304 SN SO 8 Q67000-S4012
Continuous drain current
T
A
= 25 ˚C
I
D
6.4 A
Pulsed drain current
T
A
= 25 ˚C
25.6
I Dpulse
Avalanche energy, single pulse
I
D
= 6.4 A, V
DD
= 25 V, R
GS
= 25 Ω
mJ
E
AS
90
Avalanche current,periodic limited by T
jmax
I
AR
6.4 A
Avalanche energy, periodic limited by T
jmax
mJ
E
AR
0.2
Reverse diode d v /d t
I
S
= 6.4 A, V
DS
= 24 V, d i /d t = 200 A/µs,
T
jmax
= 150 ˚C
d v /d t
6 kV/µs
Gate source voltage V
V
GS
±20
Power dissipation
T
A
= 25 ˚C
P
tot
2 W
Operating temperature ˚C
T
j
-55 ... +150
Storage temperature
T
stg
-55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56
Maximum Ratings, at T
j
= 25 ˚C, unless otherwise specified
Parameter
Symbol Value Unit
Preliminary Data
BSO 304SN