BSP129 SIPMOS® Small-Signal-Transistor Product Summary Features VDS • N-channel 240 V 6 W 0.
BSP129 Parameter Values Symbol Conditions Unit min. typ. max. - - 25 minimal footprint - - 115 6 cm2 cooling area1) - - 70 Thermal characteristics Thermal resistance, junction - soldering point (pin 4) R thJS SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 µA 240 - - Gate threshold voltage V GS(th) V DS=3 V, I D=108 µA -2.1 -1.
BSP129 Parameter Values Symbol Conditions Unit min. typ. max. - 82 108 - 12 16 Dynamic characteristics Input capacitance C iss V GS=-3 V, V DS=25 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 6 10 Turn-on delay time t d(on) - 4.4 6.6 Rise time tr - 4.1 6.2 Turn-off delay time t d(off) - 22 33 Fall time tf - 35 53 Gate to source charge Q gs - 0.24 0.36 Gate to drain charge Q gd - 1.7 2.6 Gate charge total Qg - 3.8 5.
BSP129 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2 0.4 1.5 0.3 ID [A] Ptot [W] 1 Power dissipation 1 0.5 0.2 0.1 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 102 limited by on-state resistance 10 µs 0.5 100 100 µs ZthJA [K/W] 0.2 ID [A] 1 ms 10-1 10 ms 0.1 101 0.05 single pulse 0.02 0.
BSP129 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.7 20 -0.2 V 0V 0.2 V 0.5 V 10 V -0.1 V 0.1 V 0.6 15 0.5 RDS(on) [W] 1V ID [A] 0.4 0.3 0.5 V 10 1V 0.2 0.2 V 5 0.1 V 10 V 0V -0.1 V 0.1 -0.2 V 0 0 0 2 4 6 8 10 0 0.05 0.1 VDS [V] 0.15 0.2 0.25 0.3 0.35 0.50 0.60 0.70 ID [A] 7 Typ. transfer characteristics 8 Typ.
BSP129 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.025 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=108 µA parameter: I D 40 0 -0.5 30 98 % 98 % VGS(th) [V] RDS(on) [W] -1 20 typ -1.5 -2 2% 10 typ -2.5 0 -3 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-3 V; f =1 MHz 1 102 L K 180 J 108 µA 0.
BSP129 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.2 A pulsed parameter: T j parameter: V DD 10 6 0.5 VDS(max) 5 150 °C 0.2 VDS(max) 4 25 °C 3 0.8 VDS(max) 1 VGS [V] IF [A] 2 150 °C, 98% 1 0 0.1 -1 -2 -3 -4 0.01 0 0.5 1 1.5 2 0 1 2 3 4 Qgate [nC] VSD [V] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA VBR(DSS) [V] 280 240 200 -60 -20 20 60 100 140 180 Tj [°C] Rev. 1.
BSP129 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.
BSP129 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
