BSP135 SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 600 V RDS(on),max 60 W IDSS,min 0.
BSP135 Parameter Values Symbol Conditions Unit min. typ. max. - - 25 minimal footprint - - 115 6 cm2 cooling area2) - - 70 Thermal characteristics Thermal resistance, junction - soldering point (pin 4) R thJS SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=3 V, I D=94 µA -2.1 -1.
BSP135 Parameter Values Symbol Conditions Unit min. typ. max. - 98 146 - 8.5 13 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 3.4 5.1 Turn-on delay time t d(on) - 5.4 8.1 Rise time tr - 5.6 8.4 Turn-off delay time t d(off) - 28 42 Fall time tf - 182 273 Gate to source charge Q gs - 0.24 0.36 Gate to drain charge Q gd - 2.0 3.0 Gate charge total Qg - 3.7 4.
BSP135 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2 0.15 1.5 ID [A] Ptot [W] 0.1 1 0.05 0.5 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 100 102 10 µs limited by on-state resistance 100 µs 0.5 10-1 0.2 ZthJA [K/W] ID [A] 1 ms 10 ms 101 0.1 0.05 single pulse 10-2 0.02 DC 0.
BSP135 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.25 100 10 V -0.2 V 1V 0.2 V 0V -0.1 V 0.2 0.5 V 0.1 V 80 0.5 V RDS(on) [W] ID [A] 0.15 0.2 V 0.1 V 0.1 60 40 0V 1V -0.1 V -0.2 V 0.05 10 V 20 0 0 0 2 4 6 8 10 0 0.04 0.08 VDS [V] 0.12 0.16 0.2 ID [A] 7 Typ. transfer characteristics 8 Typ.
BSP135 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.01 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=94 µA parameter: I D 160 0 140 -0.5 120 98 % -1 VGS(th) [V] RDS(on) [W] 100 80 98 % typ -1.5 60 -2 2% 40 typ -2.5 20 0 -3 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Threshold voltage bands 12 Typ.
BSP135 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.1 A pulsed parameter: T j parameter: V DD 100 8 0.5 VDS(max) 0.2 VDS(max) 6 0.8 VDS(max) 25 °C 10-1 150 °C 4 150 °C, 98% IF [A] VGS [V] 25 °C, 98% 2 0 10-2 -2 10-3 -4 0 0.5 1 1.5 2 VSD [V] 0 1 2 3 4 5 Qgate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 700 VBR(DSS) [V] 660 620 580 540 500 -60 -20 20 60 100 140 180 Tj [°C] Rev. 1.
BSP135 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.
BSP135 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.