Datasheet

BSP135
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
A
=25 °C
0.12 A
T
A
=70 °C
0.10
Pulsed drain current
I
D,pulse
T
A
=25 °C
0.48
Reverse diode dv /dt dv /dt
I
D
=0.12 A, V
DS
=20 V,
di /dt=200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
ESD Class
(JESD22-A114-HBM)
1A(>250V,<500V)
Power dissipation
P
tot
T
A
=25 °C
1.8 W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1)
see table on next page and diagram 11
Value
V
DS
600
V
R
DS(on),max
60
I
DSS,min
0.02
A
Product Summary
PG-SOT223
Type
Package
Tape and Reel Information
Marking
Packaging
BSP135
PG-SOT223
L6327: 1000 pcs/reel
BSP135
Non dry
BSP135
PG-SOT223
L6906: 1000 pcs/reel
BSP135
Non dry
Type
Package
Tape and Reel Information
Marking
Packaging
BSP135
PG-SOT223
L6327: 1000 pcs/reel
BSP135
Non dry
BSP135
PG-SOT223
L6906: 1000 pcs/reel
sorted in V
GS(th)
bands1)
BSP135
Non dry
Rev. 1.32 page 1 2012-03-20

Summary of content (9 pages)