BSP149 SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 200 V RDS(on),max 3.5 W IDSS,min 0.
BSP149 Parameter Values Symbol Conditions Unit min. typ. max. - - 25 minimal footprint - - 115 6 cm2 cooling area1) - - 70 Thermal characteristics Thermal resistance, junction - soldering point (pin 4) R thJS SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 µA 200 - - Gate threshold voltage V GS(th) V DS=3 V, I D=400 µA -2.1 -1.
BSP149 Parameter Values Symbol Conditions Unit min. typ. max. - 326 430 - 41 55 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 17 25 Turn-on delay time t d(on) - 5.1 7.7 Rise time tr - 3.4 5.1 Turn-off delay time t d(off) - 45 68 Fall time tf - 21 31 Gate to source charge Q gs - 0.74 1.0 Gate to drain charge Q gd - 5.6 8.4 Gate charge total Qg - 11 14 Gate plateau voltage V plateau - 0.
BSP149 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2 0.7 0.6 1.5 0.4 ID [A] Ptot [W] 0.5 1 0.3 0.2 0.5 0.1 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 102 limited by on-state resistance 10 µs 100 µs 0.5 100 ZthJA [K/W] 1 ms ID [A] 10 ms 10-1 0.2 101 0.1 DC 0.05 10-2 single pulse 0.02 0.
BSP149 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 10 V 1V 1 6 -0.2 V 0.5 V 0V -0.1 V 0.5 V 0.2 V 0.1 V 5 0.8 4 ID [A] 0.6 RDS(on) [W] 0.2 V 0.1 V 0V 0.4 -0.1 V 3 2 -0.2 V 1V 0.2 1 0 10 V 0 0 2 4 6 8 10 0 0.2 0.4 VDS [V] 0.6 0.8 1 ID [A] 7 Typ. transfer characteristics 8 Typ.
BSP149 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.07 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=400 µA parameter: I D 8 0 -0.5 6 98 % VGS(th) [V] RDS(on) [W] -1 98 % 4 typ -1.5 -2 2 2% typ -2.5 0 -3 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Threshold voltage bands 12 Typ.
BSP149 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.5 A pulsed parameter: T j parameter: V DD 10 5 0.5 VDS(max) 4 150 °C 0.2 VDS(max) 25 °C 3 0.8 VDS(max) 0.12 A 2 1 IF [A] VGS [V] 150 °C, 98% 1 0 25 °C, 98% -1 0.1 -2 -3 -4 0.01 0 0.5 1 25 °C, 98% 1.
BSP149 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 2.
BSP149 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
