Datasheet

2011-08-24
Page 1
BSP295
Rev 2.2
SIPMOS
Small-Signal-Transistor
Product Summary
V
DS
60 V
R
DS(on)
0.3
I
D
1.8 A
Feature
N-Channel
Enhancement mode
dv/dt rated
PG-SOT223
VPS05163
1
2
3
4
Marking
BSP295
Type
Package
Tape and Reel Information
BSP295
PG-SOT223
L6327: 1000 pcs/reel
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
1.8
1.44
A
Pulsed drain current
T
A
=25°C
I
D puls
7.2
Reverse diode dv/dt
I
S
=1.8A, V
DS
=40V, di/dt=200A/µs, T
jmax
=150°C
dv/dt 6 kV/µs
Gate source voltage V
GS
±20
V
ESD class (JESD22-A114-HBM) 1B (>500V, <1000V)
Power dissipation
T
A
=25°C
P
tot
1.8 W
Operating and storage temperature T
j
,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/56
Pb-free lead plating; RoHS compliant
x Qualified according to AEC Q101
PackagingMarking
Non dry

Summary of content (8 pages)