Datasheet

1999-09-22
Page 1
BSP308
Preliminary data
SIPMOS

Small-Signal-Transistor
Features
• N-Channel
• Enhancement mode
• Logic Level
• d v /d t rated
Product Summary
Drain source voltage V V
DS
30
Drain-Source on-state resistance R
DS(on)
0.05
Ω
Continuous drain current A I
D
4.7
VPS05163
1
2
3
4
Type Package Ordering Code
BSP308 SOT-223 Q67000-S4011
Pin 1 Pin 2/4 PIN 3
G D S
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol UnitValue
4.7
3.9
AContinuous drain current
T
A
= 25 °C
T
A
= 70 °C
I
D
Pulsed drain current
T
A
= 25 °C
I
D puls
18.8
d v /d t 6Reverse diode d v /d t
I
S
= 4.7 A, V
DS
= 20 V, d i /d t = 200 A/µs,
T
jmax
= 150 °C
kV/µs
Gate source voltage V
GS
±20 V
Power dissipation
T
A
= 25 °C
P
tot
1.8 W
Operating and storage temperature T
j
, T
stg
-55...+150 °C
IEC climatic category; DIN IEC 68-1 55/150/56