BSP 317 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 317 -200 V -0.37 A 6Ω SOT-223 Type BSP 317 Ordering Code Q67000-S94 Pin 2 D Pin 3 Pin 4 S D Marking Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage V -200 Unit V DGR RGS = 20 kΩ -200 Gate source voltage VGS Continuous drain current ID TA = 25 ˚C ± 20 A -0.
BSP 317 Maximum Ratings Parameter Symbol Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ...
BSP 317 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS≥ 2 * ID * RDS(on)max, ID = -0.37 A Input capacitance 0.25 - 270 360 - 50 75 - 15 25 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 0.
BSP 317 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 ˚C Inverse diode direct current,pulsed -0.37 - - -1.48 V V SD VGS = 0 V, IF = -0.74 A, Tj = 25 ˚C Data Sheet - ISM TA = 25 ˚C Inverse diode forward voltage - - 4 -0.95 -1.1 05.
BSP 317 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V 2.0 -0.38 W A -0.32 Ptot 1.6 ID -0.28 1.4 -0.24 1.2 -0.20 1.0 -0.16 0.8 0.6 -0.12 0.4 -0.08 0.2 -0.04 0.0 0.00 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 TA 120 ˚C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T parameter : D = 0, TC=25˚C 10 2 K/W 10 1 ZthJA 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.
BSP 317 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs -0.9 19 Ptot = 2W Ω jki lh g f A ID Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C e b -2.5 c -3.0 d -3.5 e -4.0 d f -4.5 g -5.0 h -6.0 i -7.0 j -8.0 -0.6 -0.5 -0.4 c -0.3 -0.2 k -9.0 b l -10.0 b c d 16 VGS [V] a -2.0 -0.7 a RDS (on) 14 12 10 8 6 e f 4 -0.1 2 a 0.0 g ki jhl VGS [V] = a b c d e f -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 g h i j -5.0 -6.0 -7.0 -8.
BSP 317 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -0.37 A, VGS = -10 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = -1 mA 18 -4.6 V Ω RDS (on) -4.0 VGS(th) 14 -3.6 -3.2 12 -2.8 10 -2.4 98% 98% 8 -2.0 -1.6 6 typ typ -1.2 2% 4 -0.8 2 -0.4 0 0.0 -60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 Tj ˚C 160 Tj Typ.
BSP 317 Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25˚C -240 V -230 V(BR)DSS -225 -220 -215 -210 -205 -200 -195 -190 -185 -180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.
