Datasheet

2008-03-27Rev.2.6 Page 1
BSP613P
SIPMOS

Small-Signal-Transistor
Product Summary
V
DS
-60 V
R
DS(on)
0.13 Ω
I
D
-2.9 A
Feature
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• Ideal for fast switching buck converter
PG-SOT223
Gate
pin1
Drain
pin 2,4
Source
pin 3
Type Package Tape and reel
BSP613P PG-SOT223 L6327: 1000pcs/r.
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-2.9
-2.3
A
Pulsed drain current
T
A
=25°C
I
D puls
-11.6
Avalanche energy, single pulse
I
D
=2.9 A , V
DD
=-25V, R
GS
=25Ω
E
AS
150
mJ
Avalanche energy, periodic limited by T
jmax
E
AR
0.18
Reverse diode dv/dt
I
S
=2.9A, V
DS
=-48V, di/dt=-200A/µs, T
jmax
=150°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
1.8
W
Operating and storage temperature
T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
D r y B S P 613 P
Packaging Marking
• Qualified according to AEC Q101
ESD Class
JESD22-A114-HBM
Class 1c