Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsPMICsPMIC - ELCs High side SOIC 8

2004-01-27

Page 1

BSP 752 R

Smart Power High-Side-Switch

Product Summary

Overvoltage protection V

(

)

62 V

Operating voltage V

(

)

6...52 V

On-state resistance R

200 mΩ

Nominal load current I

(

nom

)

1.3 A

Features

• Overload protection

• Current limitation

• Short circuit protection

• Thermal shutdown with restart

• Overvoltage protection (including load dump)

• Fast demagnetization of inductive loads

• Reverse battery protection with external resistor

• Open drain diagnostic output for overtemperature

and short circuit

• Open load detection in OFF - State

with external resistor

• CMOS compatible input

• Loss of GND and loss of V

protection

• ESD - Protection

• Very low standby current

Application

• All types of resistive, inductive and capacitive loads

• µC compatible power switch for 12 V, 24 V and 42 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input

and diagnostic feedback, monolithically integrated in Smart SIPMOS



technology.

Providing embedded protective functions.

Summary of content (17 pages)

PAGE 1
BSP 752 R Smart Power High-Side-Switch Features Product Summary • Overload protection Overvoltage protection Vbb(AZ) • Current limitation Operating voltage Vbb(on) • Short circuit protection On-state resistance RON 200 mΩ • Thermal shutdown with restart Nominal load current IL(nom) 1.3 A 62 V 6...
PAGE 2
BSP 752 R Block Diagram + V bb Voltage Overvoltage Current Gate source protection limit protection V Logic Charge pump Level shifter Rectifier Limit for unclamped ind.
PAGE 3
BSP 752 R Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Value Unit Supply voltage Vbb 52 Supply voltage for full short circuit protection Vbb(SC) 50 Continuous input voltage VIN -10 ... +16 Load current (Short - circuit current, see page 5) IL self limited Current through input pin (DC) I IN ±5 mA Operating temperature Tj -40 ...+150 °C Storage temperature T stg -55 ... +150 Power dissipation 1) Ptot 1.
PAGE 4
BSP 752 R Electrical Characteristics Parameter and Conditions Symbol at Tj = -40...+150°C, V bb = 12..42V, unless otherwise specified Values min. typ. Unit max. Load Switching Capabilities and Characteristics On-state resistance RON mΩ T j = 25 °C, I L = 1 A, V bb = 9...52 V - 150 200 T j = 150 °C - 270 380 1.3 1.7 - A µs Nominal load current; Device on PCB 1) IL(nom) T C = 85 °C, T j ≤ 150 °C to 90% V OUT ton - 80 180 to 10% V OUT toff - 80 200 dV/dton - 0.
PAGE 5
BSP 752 R Electrical Characteristics Parameter and Conditions Symbol at Tj = -40...+150°C, Vbb = 12..42V, unless otherwise specified Values min. typ. Unit max. Protection Functions1) Initial peak short circuit current limit (pin 5 to 3) A I L(SCp) Tj = -40 °C, Vbb = 20 V, tm = 150 µs - - 9 Tj = 25 °C - 6.5 - Tj = 150 °C 4 - - Tj = -40...+150 °C, Vbb > 40 V , ( see page 12 ) - 5 2) - Tj = Tjt (see timing diagrams) Vbb < 40 V - 6 - Vbb > 40 V - 4.
PAGE 6
BSP 752 R Electrical Characteristics Parameter Symbol at Tj = -40...+150°C, Vbb = 12..42V, unless otherwise specified Values Unit min. typ. max. Input and Status feedback Input turn-on threshold voltage VIN(T+) - - 2.2 V Input turn-off threshold voltage VIN(T-) 0.8 - - Input threshold hysteresis ∆V IN(T) - 0.4 - Off state input current I IN(off) 1 - 25 I IN(on) 3 - 25 5.4 6.1 - Tj = -40...+25 °C, IST = 1.6 mA - - 0.4 Tj = 150 °C, IST = 1.6 mA - - 0.
PAGE 7
BSP 752 R Input Output level level Normal L L H operation H H H Short circuit L L H to GND H L* L Short circuit to L H L Vbb (in off-state) H H H Overload L L H H H ** H L L H H L L Open Load in L Z H (L 1)) off-state H H H Overtemperature Status *) Out ="L": VOUT < 2.8V typ. **) Out ="H": V OUT > 2.8V typ.
PAGE 8
BSP 752 R Terms Inductive and overvoltage output clamp Ibb + V bb V I IN IN V IL PROFET I ST VON V IN ON OUT OUT ST V Z Vbb GND GND V ST I GND bb R GND V OUT VON clamped to 59V min. Input circuit (ESD protection) R IN Overvoltage protection of logic part I ESD- ZD I I I GND The use of ESD zener diodes as voltage clamp at DC conditions is not recommended Reverse battery protection ± 5V - V bb R ST IN RI VZ1 =6.1V typ., VZ2 =Vbb(AZ) =62V min., RI=3.5 kΩ typ.
PAGE 9
BSP 752 R Open-load detection Vbb disconnect with charged inductive OFF-state diagnostic condition: V OUT > 3V typ.
PAGE 10
BSP 752 R Typ. transient thermal impedance Typ. transient thermal impedance ZthJA=f(tp) @ 6cm 2 heatsink area Z thJA=f(tp) @ min. footprint Parameter: D=tp/T Parameter: D=tp/T 10 2 10 2 D=0.5 K/W D=0.5 K/W D=0.2 D=0.2 10 1 D=0.1 10 1 D=0.02 10 0 D=0.02 10 0 D=0.01 10 -1 D=0.05 Z thJA ZthJA D=0.05 D=0 D=0.1 D=0.
PAGE 11
BSP 752 R Typ. turn on time Typ. turn off time ton = f(Tj ); RL = 47Ω toff = f(Tj); RL = 47Ω 160 160 µs µs 9V 120 13.5V 100 80 toff t on 120 100 80 42V 60 60 40 40 20 20 0 -40 -20 0 20 40 60 80 100 120 °C Tj 9...42V 0 -40 -20 160 0 20 40 60 Typ. slew rate on Typ. slew rate off dV/dton = f(T j) ; RL = 47 Ω dV/dtoff = f(Tj); R L = 47 Ω 2 80 100 120 °C Tj 160 3.5 V/µs V/µs -dV dtoff dV dton 1.6 1.4 1.2 2.5 2 1 42V 1.5 0.8 42V 0.6 1 13.5V 0.4 9V 13.
PAGE 12
BSP 752 R Typ. standby current Typ. leakage current Ibb(off) = f(Tj ) ; Vbb = 42V ; VIN = low I L(off) = f(Tj) ; Vbb = 42V ; VIN = low 10 2.5 µA I L(off) I bb(off) µA 6 1.5 4 1 2 0.5 0 -40 -20 0 20 40 60 80 100 120 °C Tj 0 -40 -20 160 0 20 40 60 80 100 120 °C Tj 160 Typ. initial peak short circuit current limit Typ. initial short circuit shutdown time IL(SCp) = f(Vbb) toff(SC) = f(Tj,start) ; Vbb = 20V 4 10 ms A -40°C toff(SC) IL(SCp) 3 25°C 150°C 6 2.5 2 4 1.
PAGE 13
BSP 752 R Typ. input current Typ. input current IIN(on/off) = f(Tj); Vbb = 13,5V; VIN = low/high I IN = f(VIN); V bb = 13.5V VINlow ≤ 0,7V; VINhigh = 5V 50 12 µA µA 8 IIN IIN -40...25°C on 150°C 30 6 20 off 4 10 2 0 -40 -20 0 20 40 60 80 100 120 °C Tj 0 0 160 1 2 3 4 5 Typ. input threshold voltage Typ. input threshold voltage VIN(th) = f(Tj ) ; Vbb = 13,5V VIN(th) = f(V bb) ; Tj = 25°C 2 8 V on on 1.6 1.6 off 1.4 1.2 VIN(th) V IN(th) V VIN 2 V 1.4 1 0.
PAGE 14
BSP 752 R Maximum allowable load inductance Typ. status delay time for a single switch off td(ST) = f(V bb); T j = 25°C L = f(IL); Tjstart =150°C, RL=0Ω 2000 300 µs mH t d(ST+/-) L 1400 1200 225 200 175 1000 150 800 125 td(ST+) 100 600 42V 400 75 13,5V 50 200 0 0 td(ST-) 250 1600 25 0.25 0.5 0.75 1 0 0 1.5 A 10 20 30 50 V IL Vbb Maximum allowable inductive switch-off Typ.
PAGE 15
BSP 752 R Timing diagrams Figure 2b: Switching a lamp, Figure 1a: Vbb turn on: IN IN Vbb ST I V L OUT IL ST t Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition Figure 2c: Switching an inductive load IN V IN OUT ST 90% t on dV/ dton 10% dV/ dtoff t VOUT off IL t IL ST Page 15 2004-01-27
PAGE 16
BSP 752 R Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling Figure 3b: Short circuit in on-state shut down by overtemperature, restart by cooling IN IN V V OUT OUT Output I IL short L( SCp ) to GND I n o rm a l o p e r a t io n I L( SCr ) O u tp u t s h o r t to G N D L I L (S C r) tm ST ST t t t d(ST+) Heating up of the chip may require several milliseconds, depending on external conditions.
PAGE 17
BSP 752 R Package and ordering code all dimensions in mm Package: Ordering code: P-DSO-8-6 Q67060-S7306 Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm2 active heatsink area ) as a reference for max. power dissipation Ptot nominal load current IL(nom) and thermal Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved.