Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsPMICsPMIC - ELCs Low side PG SOT223 4

Data Sheet Rev. 1.4 1 2008-07-10

Smart Lowside Power Switch

HITFET



BSP 75N

Data Sheet Rev. 1.4

Features

• Logic Level Input

• Input protection (ESD)

• Thermal shutdown with auto restart

• Overload protection

• Short circuit protection

• Overvoltage protection

• Current limitation

• Green Product (RoHS compliant)

• AEC Stress Test Qualification

Application

• All kinds of resistive, inductive and capacitive loads in switching applications

• µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt

Powernet

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart Power Technology. Fully protected by embedded

protection functions.

Type Ordering Code Package

HITFET



BSP 75N on request PG-SOT223-4

Product Summary

Parameter Symbol Value Unit

Continuous drain source voltage V

60 V

On-state resistance R

DS(ON)

550 mΩ

Current limitation I

D(lim)

1 A

Nominal load current I

D(Nom)

0.7 A

Clamping energy E

550 mJ

Summary of content (15 pages)

PAGE 1
HITFET BSP 75N Smart Lowside Power Switch Data Sheet Rev. 1.
PAGE 2
HITFET BSP 75N Vbb HITFET M Logic OUTPUT Stage Over voltage Protection DRAIN dV/dt limitation IN ESD Current Limitation SOURCE Figure 2 1 IN 2 DRAIN 3 SOURCE TAB Block Diagram SOURCE Figure 1 Short circuit Protection Over temperature Protection Pin Configuration Pin Definitions and Functions Pin No.
PAGE 3
HITFET BSP 75N Circuit Description The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions. It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications. Protection Functions • Over voltage protection: An internal clamp limits the output voltage at VDS(AZ) (min. 60V) when inductive loads are switched off.
PAGE 4
HITFET BSP 75N Absolute Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Continuous drain source voltage 1) Drain source voltage for short circuit protection Continuous input voltage Peak input voltage Continuous Input Current -0.2V ≤ VIN ≤ 10V VIN<-0.2V or VIN>10V Symbol Values Unit Remarks VDS VDS 60 V – 36 V – VIN VIN IIN -0.2 … +10 V – -0.
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HITFET BSP 75N Electrical Characteristics Tj = 25 °C, unless otherwise specified Parameter Symbol Limit Values min. typ. Unit Test Conditions max. Static Characteristics Drain source clamp voltage VDS(AZ) 60 – 75 V Off state drain current IDSS – 5 µA Input threshold voltage VIN(th) 1 1.8 2.
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HITFET BSP 75N Electrical Characteristics (cont’d) Tj = 25 °C, unless otherwise specified Parameter Symbol Limit Values min. typ. Unit Test Conditions max. Slew rate on 70 to 50% VBB: -dVDS/ – dton 5 10 V/ µs Slew rate off 50 to 70% VBB: dVDS/ dtoff – 10 15 V/ µs RL = 22 Ω, VIN = 0 to 10 V, VBB = 12 V RL = 22 Ω, VIN = 10 to 0 V, VBB = 12 V Protection Functions2) Thermal overload trip temperature Tjt 150 165 180 °C – Thermal hysteresis ∆Tjt – 10 – Κ – mJ ID(ISO) = 0.
PAGE 7
HITFET BSP 75N EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 1 Test Conditions Parameter Symbol Value Unit Remark Temperature TA 23 ±5 °C – Supply Voltage VS 13.5 V – Load RL 27 Ω ohmic Operation mode PWM DC – – – – fINx=100Hz, D=0.5 ON / OFF DUT specific VIN(’HIGH’)=5V Fast electrical transients acc. to ISO 7637 Test Result 1) Test1) Pulse Max.
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HITFET BSP 75N Conducted Susceptibility PULSE VBB Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection) BSP75N IN Direct Power Injection: Forward Power CW RL Failure Criteria: Amplitude or frequency variation max. 10% at OUT DRAIN SOURCE Typ. Vbb Susceptibility at DC-ON/OFF and at PWM Figure 3 40 Test circuit for ISO pulse 35 30 Conducted Emissions 25 dBm Acc. IEC 61967-4 (1Ω/150Ω method) 20 15 Typ.
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HITFET BSP 75N Block diagram VBB ID uC Vcc IIN HITFET IN VIN Px.1 Vbb DRAIN SOURCE GND IN D SOURCE VDS Figure 8 Figure 5 BSP75N Application Circuit Terms IN SOURCE Figure 6 Input Circuit (ESD protection) ESD zener diodes are not designed for DC current. LOAD Drain VAZ VDS Power DMOS Source ID Figure 7 Inductive and Over voltage Output Clamp Data Sheet Rev. 1.
PAGE 10
HITFET BSP 75N Timing diagrams VIN VIN ID VDS t t ϑj 0.9*ID ID t ID(lim) t thermal hysteresis t 0.1*ID ton Figure 9 toff t Figure 11 Short circuit Switching a Resistive Load VIN VDS(AZ) VDS t VBB t ID t Figure 10 Switching an Inducitve Load Data Sheet Rev. 1.
PAGE 11
HITFET BSP 75N 2 On-state resistance RON = f(Tj); ID = 0.7 A; VIN = 10 V 1 Max. allowable power dissipation Ptot = f(TAmb) 2 P 1000 R to t ON 9m0Ω 0 1,6 W 800 m ax. 700 m a x. 600 1,2 typ . 500 400 0,8 300 200 0,4 100 0 0 0 25 50 75 1 00 °C 125 -5 0 -2 5 15 0 T 25 50 7 5 1 0 0 1°C 25 150 T 3 On-state resistance RON = f(Tj); ID = 0.7 A; VIN = 5 V j 4 Typ.
PAGE 12
HITFET BSP 75N 5 Typ. on-state resistance RON = f(VIN); ID = 0.7 A; Tj = 25 °C 6 Typ. current limitation ID(lim) = f(Tj); VDS = 12 V, VIN = 10 V 2000 R 2 I D (lim ) ON typ . 1m 5 0Ω0 typ . 1A,5 1000 1 500 0 ,5 0 0 0 2 4 6 V 8 10 V -5 0 -2 5 0 25 50 75 1 0 0 1°C 25 150 T IN 7 Typ. short circuit current ID(SC) = f(VIN); VDS = 12 V, Tj = 25 °C j 8 Max. transient thermal impedance ZthJA = f(tp) @ 6cm²; Parameter: D = tp/T 100 2 I D (S C ) Z th (J A ) typ .
PAGE 13
HITFET BSP 75N Package Outlines HITFET‚ BSP 75N Package Outlines HITFET BSP 75N 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 1 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.
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HITFET BSP 75N Revision History 2 Revision History Version Date Changes Rev. 1.4 2008-07-10 fixed a formatting error in Disclaimer page Rev. 1.3 2008-04-14 package naming updated to PG-SOT223-4 Rev. 1.2 2007-04-12 released automotive green version changed package naming from -11 to PG-SOT223-4-7 Rev. 1.
PAGE 15
HITFET BSP 75N Edition 2008-07-10 Published by Infineon Technologies AG, 81726 Munich, Germany © Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).