Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsBSP78, MOSFET HitFET Max 30A >42V

Product Summary

Drain source voltage

42 V

On-state resistance R

(

)

50 mW

Nominal load current I

(

Nom

)

3 A

Clamping energy E

500 mJ

VPS05163

Application

· All kinds of resistive, inductive and capacitive loads in switching

or linear applications

· µC compatible power switch for 12 V DC applications

· Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOS

technology. Fully protected by embedded

protection functions.

Gate-Driving

Unit

ESD

Overload

Protection

Over-

temperature

Protection

Short circuit

Protection

Overvoltage-

Protection

Current

Limitation

Vbb

Source

Drain

HITFET

Pin 1

Pin 2 and 4 (TAB)

Pin 3

Complete product spectrum and additional information http://www.infineon.com/hitfet

Features

· Logic Level Input

· Input Protection (ESD)

· Thermal shutdown with auto restart

• Green product (RoHS compliant)

· Overload protection

· Short circuit protection

· Overvoltage protection

· Current limitation

· Analog driving possible

Datasheet 1 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch

HITFET BSP 78

Summary of content (11 pages)

PAGE 1
Smart Low Side Power Switch HITFET BSP 78 Features Product Summary · Logic Level Input Drain source voltage VDS 42 V · Input Protection (ESD) On-state resistance RDS(on) 50 mW · Thermal shutdown with auto restart Nominal load current ID(Nom) 3 A • Green product (RoHS compliant) Clamping energy EAS 500 mJ · Overload protection · Short circuit protection 4 · Overvoltage protection 3 · Current limitation 2 · Analog driving possible 1 VPS05163 Application · All kinds of resistive
PAGE 2
Smart Low Side Power Switch HITFET BSP 78 Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Drain source voltage VDS 42 Supply voltage for full short circuit protection Vbb(SC) 42 Continuous input voltage1) VIN Continuous input current2) IIN -0.2V £ VIN £ 10V Value Unit V -0.22) ... +10 mA self limited VIN < -0.2V or VIN > 10V | IIN | £ 2 Operating temperature Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation 5) Ptot 3.
PAGE 3
Smart Low Side Power Switch HITFET BSP 78 Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Characteristics VDS(AZ) Drain source clamp voltage Values Unit min. typ. max. 42 - 55 V Tj = - 40 ...+ 150, ID = 10 mA IDSS Off-state drain current Tj = -40...+85 °C, V DS = 32 V , VIN = 0 V Tj = 150 °C µA - 1.5 8 - 5 15 VIN(th) Input threshold voltage ID = 1.4 mA, T j = 25 °C ID = 1.
PAGE 4
Smart Low Side Power Switch HITFET BSP 78 Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. ton - 60 100 toff - 60 100 -dVDS/dt on - 0.3 1.5 dVDS/dtoff - 0.7 1.5 150 175 - °C K Dynamic Characteristics Turn-on time VIN to 90% ID : µs RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V VIN to 10% ID: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: Turn-off time RL = 4.
PAGE 5
Smart Low Side Power Switch HITFET BSP 78 Block diagram Inductive and overvoltage output clamp Terms RL V 2 I IN 1 D Z D IN ID VDS Vbb HITFET S S 3 VIN HITFET Short circuit behaviour Input circuit (ESD protection) Gate Drive Input VIN Source/ Ground IIN IDS Tj Datasheet 5 Rev. 1.
PAGE 6
Smart Low Side Power Switch HITFET BSP 78 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TS) resp. R ON = f(Tj ); ID=3A; V IN=10V Ptot = f(TA) @ R thJA=72 K/W 10 100 W mW 8 80 RDS(on) max. 7 Ptot max. 6 70 typ. 60 5 50 4 40 3 30 2 6cm2 20 1 10 0 -75 -50 -25 0 25 50 75 100 °C 0 -50 150 -25 0 25 50 75 100 125 °C TS ;TA 3 On-state resistance 4 Typ. input threshold voltage R ON = f(T j); ID= 3A; VIN=5V VIN(th) = f(Tj); ID = 0.
PAGE 7
Smart Low Side Power Switch HITFET BSP 78 5 Typ. transfer characteristics 6 Typ. short circuit current I D=f(V IN); VDS=12V; T Jstart=25°C ID(lim) = f(Tj); VDS=12V Parameter: V IN A A 20 20 ID 30 ID 30 Vin=10V 15 15 10 10 5 5 0 0 1 2 3 4 5 6 7 8 V 0 -50 10 5V -25 0 25 50 75 VIN 100 125 °C 175 Tj 7 Typ. output characteristics 8 Off-state drain current I D=f(V DS); T Jstart=25°C Parameter: V IN IDSS = f(T j) 35 16 max.
PAGE 8
Smart Low Side Power Switch HITFET BSP 78 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 40 2 K/W D=0.5 A 10 0.1 ZthJA ID(lim) 30 0.2 1 -40°C 25 0.05 10 0.02 0 0.01 20 10 -1 10 -2 15 10 85°C 150°C 25°C Single pulse 5 0 0 10 0.5 1 1.5 2 2.
PAGE 9
Smart Low Side Power Switch HITFET BSP 78 Package Outlines Package Outlines 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 1 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.
PAGE 10
Smart Low Side Power Switch HITFET BSP 78 Revision History 2 Revision History Version Rev. 1.3 Date Changes 2008-04-14 Package information updated to SOT223-4 Rev. 1.2 2007-02-15 released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2004-03-05 released production version Datasheet 10 Rev.
PAGE 11
Edition 2008-04-14 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).