Datasheet

Electrical Characteristics
Parameter
Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 4.7 W, V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
- 60 100
µs
Turn-off time V
IN
to 10% I
D
:
R
L
= 4.7 W, V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
- 60 100
Slew rate on 70 to 50% V
bb
:
R
L
= 4.7 W, V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
- 0.3 1.5
V/µs
Slew rate off 50 to 70% V
bb
:
R
L
= 4.7 W, V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
- 0.7 1.5
Protection Functions
1)
Thermal overload trip temperature T
j
t
150 175 - °C
Thermal hysteresis
2)
DT
j
t
- 10 - K
Input current protection mode
T
j
= 150 °C
I
IN(Prot)
- 130 300 µA
Unclamped single pulse inductive energy
2)
I
D
= 3 A, T
j
= 25 °C, V
bb
= 12 V
E
AS
500 - - mJ
Inverse Diode
Inverse diode forward voltage
I
F
= 15 A, t
m
= 250 µs, V
IN
= 0 V,
t
P
= 300 µs
V
SD
- 1 1.5
V
1
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2
not subject to production test, specified by design
Datasheet 4 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 78