Datasheet

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BSS138N

SIPMOS

Small-Signal-Transistor

Features

• N-channel

• Enhancement mode

• Logic level

• dv /dt rated

• Pb-free lead-plating; RoHS compliant

• Qualified according to AEC Q101

• Halogen free according to IEC61249-2-21

60 V

DS(on),max

3.5

0.23 A

Product Summary

PG-SOT-23

Type Package Tape and Reel Marking

BSS138N PG-SOT-23 H6327: 3000 SKs

BSS138N PG-SOT-23 H6433: 10000 SKs

Rev. 2.86 page 1 2012-04-17

Parameter Symbol Conditions Unit

Continuous drain current

=25 °C

0.23 A

=70 °C

0.18

Pulsed drain current

D,pulse

=25 °C

0.92

Reverse diode dv /dt dv /dt

=0.23 A, V

=48 V,

di /dt=200 A/µs,

j,max

=150 °C

6 kV/µs

Gate source voltage

±20 V

ESD sensitivity JESD22-A114 (HBM) Class 0 (<250V)

Power dissipation

tot

=25 °C

0.36 W

Operating and storage temperature

, T

stg

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Value

Rev. 2.86 page 1 2012-04-17

Summary of content (9 pages)

PAGE 1
BSS138N SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode VDS 60 V RDS(on),max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 • Qualified according to AEC Q101 • Halogen free according to IEC61249-2-21 Type Package Tape and Reel Marking BSS138N PG-SOT-23 H6327: 3000 SKs BSS138N PG-SOT-23 H6433: 10000 SKs Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.23 T A=70 °C 0.
PAGE 2
BSS138N Parameter Values Symbol Conditions Unit min. typ. max. - - 350 60 - - Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D=250 µA Gate threshold voltage V GS(th) V GS=V DS, I D=26 µA 0.6 1.0 1.4 Drain-source leakage current I D (off) V DS=60 V, V GS=0 V, T j=25 °C - - 0.
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BSS138N Parameter Values Symbol Conditions Unit min. typ. max. - 32 41 - 7.2 9.5 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.8 3.8 Turn-on delay time t d(on) - 2.3 3.5 Rise time tr - 3.0 4.5 Turn-off delay time t d(off) - 6.7 10 Fall time tf - 8.2 12.3 Gate to source charge Q gs - 0.10 0.14 Gate to drain charge Q gd - 0.3 0.4 Gate charge total Qg - 1.0 1.
PAGE 4
BSS138N 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.25 0.4 0.2 0.3 ID [A] Ptot [W] 0.15 0.2 0.1 0.1 0.05 0 0 0 40 80 120 0 160 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 limited by on-state resistance 10 µs 0.5 100 102 100 µs ZthJA [K/W] ID [A] 0.2 1 ms 10-1 10 ms 0.1 0.05 101 100 ms 0.02 0.
PAGE 5
BSS138N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 10 0.6 10 V 7V 5V 2.9 V 4.5 V 3.2 V 4V 3.5 V 0.5 8 4V RDS(on) [Ω] ID [A] 0.4 3.5 V 0.3 3.2 V 6 4.5 V 4 5V 0.2 2.9 V 7V 10 V 2 0.1 0 0 0 1 2 3 4 0 5 0.1 VDS [V] 0.2 0.3 0.4 0.5 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.
PAGE 6
BSS138N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.23 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=26 µA parameter: I D 8 2 1.6 6 1.2 VGS(th) [V] RDS(on) [Ω] 98 % 98 % 4 typ 0.8 typ 2% 2 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 Tj [°C] 60 100 140 Tj [°C] 11 Typ.
PAGE 7
BSS138N 13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.23 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 70 12 30 V 10 65 VBR(DSS) [V] VGS [V] 8 48 V 12 V 6 60 4 55 2 50 0 0 0.2 0.4 0.6 0.8 1 Qgate [nC] Rev. 2.
PAGE 8
BSS138N Package Outline: Footprint: Packaging: Dimensions in mm Rev. 2.
PAGE 9
BSS138N Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.