Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsBSS139, MOSFET N channel 250V

BSS139

SIPMOS

Small-Signal-Transistor

Features

• N-channel

• Depletion mode

• dv /dt rated

• Available with V

GS(th)

indicator on reel

• Pb-free lead-plating; RoHS compliant

Maximum ratings, at T

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

=25 °C

0.10 A

=70 °C

0.08

Pulsed drain current

D,pulse

=25 °C

0.4

Reverse diode dv /dt dv /dt

=0.1 A,V

=200 V,

di /dt =200 A/µs,

j,max

=150 °C

6 kV/µs

Gate source voltage

±20 V

ESD class

(JESD22-A114-HBM)

0 (<250V)

Power dissipation

tot

=25 °C

0.36 W

Operating and storage temperature

, T

stg

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

see table on next page and diagram 11

Value

250 V

DS(on),max

Ω

DSS,min

0.03 A

Product Summary

PG-SOT-23

Type Package Tape and Reel Information Marking Pb-free

BSS139 PG-SOT-23 H6327: 3000 pcs/ree Yes

BSS139 PG-SOT-23

H6906: 3000 pcs/reel sorted in V

S(th)

bands

STs

Rev. 1.

page 1 20

-08-18

STs

Yes

° Halogen free according to IEC61249-2-21

° Qualified according to AEC Q101

Summary of content (9 pages)

PAGE 1
BSS139 SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 250 V R DS(on),max 30 Ω I DSS,min 0.
PAGE 2
BSS139 Parameter Values Symbol Conditions Unit min. typ. max. - - 350 250 - - Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 µA Gate threshold voltage V GS(th) V DS=3 V, I D=56 µA -2.1 -1.4 -1 Drain-source cutoff current I D(off) V DS=250 V, V GS=-3 V, T j=25 °C - - 0.
PAGE 3
BSS139 Parameter Values Symbol Conditions Unit min. typ. max. - 60 76 - 6.7 8.4 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.6 3.3 Turn-on delay time t d(on) - 5.8 8.7 Rise time tr - 5.4 8.1 Turn-off delay time t d(off) - 29 43 Fall time tf - 182 273 Gate to source charge Q gs - 0.14 0.21 Gate to drain charge Q gd - 1.3 2.0 Gate charge total Qg - 2.3 3.
PAGE 4
BSS139 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.4 0.12 0.3 I D [A] P tot [W] 0.08 0.2 0.04 0.1 0 0 0 40 80 120 160 0 40 80 T A [°C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 100 160 T A [°C] 103 limited by on-state resistance 10 µs 100 µs 1 ms 10-1 0.5 10 0.2 Z thJA [K/W] I D [A] 10 ms 2 10-2 0.1 0.05 101 DC 0.02 0.
PAGE 5
BSS139 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.2 30 V 10 -0.2 V 0V -0.1 V V1 0.2 V 0.5 V 0.1 V 0.16 V 0.5 20 R DS(on) [Ω] I D [A] 0.12 V 0.2 0.08 V 0.1 1V 10 V0 V 0.1- 10 V V 0.2- 0.04 0 0 0 2 4 6 8 10 0 0.04 V DS [V] 0.08 0.12 0.16 0.15 0.20 I D [A] 7 Typ. transfer characteristics 8 Typ.
PAGE 6
BSS139 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.015 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=56 µA 60 0 50 -0.5 40 -1 %98 V GS(th) [V] R DS(on) [Ω] parameter: I D 30 20 %98 typ -1.5 -2 %2 typ 10 -2.5 0 -3 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-3 V; f =1 MHz 10 1000 1 100 M N 0.
PAGE 7
BSS139 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.1 A pulsed parameter: T j parameter: V DD 8 1 6 0.2 VDS(max) 0.5 VDS(max) 150 °C, 98% 0.1 0.8 VDS(max) 4 25 °C V GS [V] 150 °C I F [A] 25 °C, 98% 2 0 0.01 -2 -4 0.001 0 0.4 0.8 1.2 1.6 V SD [V] 0 1 2 3 Q gate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 300 V BR(DSS) [V] 280 260 240 220 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.
PAGE 8
BSS139 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.
PAGE 9
BSS139 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.