Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsBSS169, MOSFET N channel 100V

BSS169

SIPMOS

Small-Signal-Transistor

Features

• N-channel

• Depletion mode

• dv /dt rated

• Available with V

GS(th)

indicator on reel

• Pb-free lead-plating; RoHS compliant

• Halogen-free according to AEC61249-2-21

• Qualified according to AEC Q101

100 V

DS(on),max

DSS,min

0.09 A

Product Summary

PG-SOT-23

Type Package Pb-free Tape and Reel Information Marking

BSS169 PG-SOT-23 Yes H6327: 3000 pcs/reel SFs

BSS169 PG-SOT-23 Yes H6906: 3000 pcs/reel sorted in V

GS(th)

bands

SFs

Rev. 1.8 page 1 ########

Maximum ratings, at T

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

=25 °C

0.17 A

=70 °C

0.14

Pulsed drain current

D,pulse

=25 °C

0.68

Reverse diode dv /dt dv /dt

=0.17 A, V

=80 V,

di /dt=200 A/µs,

j,max

=150 °C

6 kV/µs

Gate source voltage

±20 V

ESD Class

JESD22-A114-HBM Class 0

Power dissipation

tot

=25 °C

0.36 W

Operating and storage temperature

, T

stg

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

see table on next page and diagram 11

Value

BSS169 PG-SOT-23 Yes H6327: 3000 pcs/reel SFs

BSS169 PG-SOT-23 Yes H6906: 3000 pcs/reel sorted in V

GS(th)

bands

SFs

Rev. 1.8 page 1 ########

Summary of content (9 pages)

PAGE 1
BSS169 SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 100 V RDS(on),max 12 Ω 0.
PAGE 2
BSS169 Parameter Values Symbol Conditions Unit min. typ. max. - - 350 100 - - -2.9 -2.2 -1.8 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-10 V, I D=250 µA Gate threshold voltage V GS(th) V DS=3 V, I D=50 µA Drain-source cutoff current I D(off) V DS=100 V, V GS=-10 V, T j=25 °C - - 0.
PAGE 3
BSS169 Parameter Values Symbol Conditions Unit min. typ. max. - 51 68 - 9 13 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 4 7 Turn-on delay time t d(on) - 2.9 4.2 Rise time tr - 2.7 4.0 Turn-off delay time t d(off) - 11 17 Fall time tf - 27 40 Gate to source charge Q gs - 0.12 0.16 Gate to drain charge Q gd - 0.9 1.4 Gate charge total Qg - 2.1 2.
PAGE 4
BSS169 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.2 0.4 0.16 0.3 ID [A] Ptot [W] 0.12 0.2 0.08 0.1 0.04 0 0 0 40 80 120 0 160 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 limited by on-state resistance 0.5 100 10 µs 100 µs 102 10 ms 10-1 0.2 ZthJA [K/W] ID [A] 1 ms 0.1 0.05 0.
PAGE 5
BSS169 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.5 -0.2 V 14 0V 0.2 V -0.1 V 0.1 V 1V 0.5 V 10 V 0.4 12 0.5 V 10 RDS(on) [Ω] 0.3 ID [A] 0.2 V 0.1 V 0V -0.1 V 0.2 8 1V 6 -0.2 V 4 10 V 0.1 2 0 0 0 2 4 6 8 10 0 0.1 0.2 0.3 VDS [V] 0.4 0.5 0.40 0.50 ID [A] 7 Typ. transfer characteristics 8 Typ.
PAGE 6
BSS169 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.05 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=50 µA 24 -1.1 20 -1.5 16 -1.9 VGS(th) [V] RDS(on) [Ω] parameter: I D 98 % 12 8 98 % typ -2.3 -2.7 typ 2% 4 -3.1 0 -3.5 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Threshold voltage bands 12 Typ.
PAGE 7
BSS169 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.12 A pulsed parameter: T j parameter: V DD 100 8 0.5 VDS(max) 25 °C 150 °C 6 150 °C, 98% 0.2 VDS(max) 25 °C, 98% 10-1 0.8 VDS(max) VGS [V] 4 IF [A] 10-2 2 0 10-3 -2 10-4 -4 0 0.5 1 1.5 VSD [V] 0 0.5 1 1.5 2 2.5 Qgate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA VBR(DSS) [V] 120 100 80 -60 -20 20 60 100 140 180 Tj [°C] Rev. 1.
PAGE 8
BSS169 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.
PAGE 9
BSS169 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.