Datasheet

2011-07-11
Rev 2.7 Page 1
BSS84P
SIPMOS

Small-Signal-Transistor
Product Summary
V
DS
-60 V
R
DS(on)
8
I
D
-0.17 A
Feature
P-Channel
Enhancement mode
Logic Level
Avalanche rated
dv/dt rated
PG-SOT-23
1
2
3
VPS05161
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
YBs
Type
Package
Tape and Reel
BSS84P
PG-SOT-23
H6327:3000pcs/r.
Maximum Ratings, at T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-0.17
-0.14
A
Pulsed drain current
T
A
=25°C
I
D puls
-0.68
Avalanche energy, single pulse
I
D
=-0.17 A , V
DD
=-25V, R
GS
=25
E
AS
2.6 mJ
Avalanche energy, periodic limited by T
jmax
E
AR
0.036
Reverse diode dv/dt
I
S
=-0.17A, V
DS
=-48V, di/dt=-200A/µs, T
jmax
=150°C
dv/dt
-6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
0.36
W
Operating and storage temperature
T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
BSS84P PG-SOT-23H6433:10000pcs/r.
YBs
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
ESD Class
JESD22-A114-HBM
Class 0