Datasheet

2011-07-11
Rev 2.7 Page 6
BSS84P
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= -0.17 A, V
GS
= -10 V
-60 -20 20 60 100
°C
180
T
A
0
2
4
6
8
10
12
14
16
18
21
BSS 84 P
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
-60 -20 20 60 100
°C
160
T
A
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
- V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz
0 5 10
V
20
- V
DS
0
10
1
10
2
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 80 µs
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4
V
-3
V
SD
-3
-10
-2
-10
-1
-10
0
-10
A
BSS 84 P
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)