Datasheet, Rev. 1.
BTM7710GP Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 2.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin Assignment . .
TrilithIC 1 BTM7710GP Overview Features • • • • • • • • • • • • • • • • Quad D-MOS switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Low RDS ON High side: 70 mΩ typ. @ 25°C, 165 mΩ max. @ 110°C Low side: 40 mΩ typ. @ 25°C, 75 mΩ max. @ 110°C Peak current: typ. 15 A @ 25 °C Very low quiescent current: typ.
BTM7710GP 2 Pin Configuration 2.1 Pin Assignment Molding Compound IL1 1 NC 2 SL1 3 NC 4 SH1 5 GND 6 IH1 7 DHVS 8 ST 9 IH2 10 SH2 11 NC 12 IL2 13 NC 14 SL2 15 Heat-Slug 1 18 DL1 Heat-Slug 2 17 DHVS Heat-Slug 3 16 Figure 1 Datasheet DL2 Pin Assignment BTM7710GP (Top View) 4 Rev. 1.
BTM7710GP Table 1 Pin No.
BTM7710GP 2.
BTM7710GP 3 Block Diagram DHVS 8, 17 9 ST Diagnosis IH1 IH2 7 10 Biasing and Protection Driver IN OUT 0 0 L L 0 1 L H 1 0 H L 1 1 H H RO1 RO2 11 16 SH2 DL2 6 GND 5 18 SH1 DL1 1 IL1 13 IL2 3 SL1 Figure 3 Datasheet 15 SL2 Block Diagram BTM7710GP 7 Rev. 1.
BTM7710GP 4 Circuit Description 4.1 Input Circuit The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the gates of the standard N-channel vertical power-MOS-FETs. 4.2 Output Stages The output stages consist of an low RDSON Power-MOS H-bridge.
BTM7710GP Table 3 Truth table and Diagnosis (valid only for the High-Side-Switches) Flag IH1 IH2 Inputs Normal operation; identical with functional truth table Overtemperature high-side switch1 Overtemperature high-side switch2 Overtemperature both high-side switches Under voltage SH1 SH2 ST Remarks Outputs 0 0 1 1 0 1 0 1 L L H H L H L H 1 1 1 1 stand-by mode switch2 active switch1 active both switches active 0 1 X X L L X X 1 0 detected X X 0 1 X X L L 1 0 detected 0 X 1 0 1 X
BTM7710GP 5 Electrical Characteristics 5.1 Absolute Maximum Ratings Absolute Maximum Ratings1) – 40 °C < Tj < 110 °C Pos. Parameter Symbol Limit Values Unit Remarks min. max. VS VS(SCP) – 0.3 42 V – – 28 V – IS IIH VIH – 10 2) A TA = 25°C; tP < 100 ms –5 5 mA Pin IH1 and IH2 – 10 16 V Pin IH1 and IH2 VST IST – 0.3 5.4 V – –5 5 mA Pin ST VIL = 0 V; ID ≤ 1 mA Tj = 25°C TC = 125°C; DC TC = 85°C; tP < 100 ms; High-Side-Switches (Pins DHVS, IH1,2 and SH1,2) 5.1.
BTM7710GP 5.2 Pos. Functional Range Parameter Symbol Limit Values min. max. Unit Remarks 5.2.1 Supply voltage VS VUVOFF 42 V After VS rising above VUVON 5.2.2 Input voltage HS – 0.3 15 V – 5.2.3 Input voltage LS – 0.3 20 V – 5.2.4 Status output current 0 2 mA – 5.2.5 Junction temperature VIH VIL IST Tj – 40 110 °C – Note: Within the functional range the IC operates as described in the circuit description.
BTM7710GP ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. Current Consumption LS-switch 5.4.9 Input current IIL – 10 100 nA VIL = 20 V; VDSL = 0V VIL = 0 V VDSL = 40V 5.4.10 Leakage current of low-side switch IDL LK – – 10 μA VUVON VUVOFF VUVHY – – 4.8 V VS increasing 1.8 – 3.
BTM7710GP ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. 15 18 20 A Tj = – 40 °C – 15 – A Tj = + 25 °C 10 12 15 A Tj = + 110 °C1) RO 8 15 35 kΩ VDSL = 3 V Short Circuit of high-side switch to GND 5.4.18 Initial peak SC current tdel = 100 µs; VS = 12 V; VDSH = 12V ISCP H Short Circuit of high-side switch to VS 5.4.
BTM7710GP ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. VIH High VIH Low VIH HY IIH High IIH Low RI VIH Z – – 2.5 V – 1 – – V – – 0.3 – V – 15 30 60 μA 5 – 20 μA VIH = 5 V VIH = 0.4 V 2.7 4 5.5 kΩ – 5.4 – – V IIH = 1.6 mA VIL th 0.9 1.7 2.35 V IDL = 1.0 mA Control Inputs of high-side switches IH 1, 2 5.4.38 H-input voltage 5.4.
BTM7710GP 6 Application Information Note: The following simplified application examples are given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device.
BTM7710GP 7 Package Outlines 21.6 ±0.2 8.3 1) 4.4 5.56 ±0.15 1.27 ±0.1 B 0.1 A 4.7 ±0.5 14x1.4 0.05 2.4 8.41) 8.21) 4.8 9.25 ±0.2 (15) 1±0.3 8.18 ±0.15 1) 2.7 ±0.3 1±0.2 0...0.15 0.8 ±0.1 0.5 ±0.1 8˚ max. 0.25 1) M A B 0.1 Typical All metal surfaces tin plated, except area of cut. Footprint 21.6 8.4 4 16 9.5 0.8 0.
BTM7710GP 8 Revision History Rev. Date Changes 1.0 2008-07-07 Initial version Datasheet 17 Rev. 1.
Edition 2008-07-07 Published by Infineon Technologies AG 81726 Munich, Germany © 7/10/08 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.