Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsPMICsPMIC - ELCs Low side PG SOT223 4

Product Summary

Drain source voltage

42 V

On-state resistance R

(

)

200 m

Nominal load current I

(

Nom

)

1.4 A

Clamping energy E

150 mJ

VPS05163

Application

All kinds of resistive, inductive and capacitive loads in switching

or linear applications

µC compatible power switch for 12 V DC applications

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded

protection functions.

Gate-Driving

Unit

ESD

Overload

Protection

Over-

temperature

Protection

Short circuit

Protection

Overvoltage-

Protection

Current

Limitation

Vbb

Source

Drain

HITFET

Pin 1

Pin 2 and 4 (TAB)

Pin 3

Features

· Logic Level Input

· Input Protection (ESD)

· Thermal shutdown

• Green product (RoHS compliant)

· Overload protection

· Short circuit protection

· Overvoltage protection

· Current limitation

· Analog driving possible

Datasheet 1 Rev. 1.3, 2008-04-14

Smart Low Side Power Switch

HITFET BTS 3110N

Summary of content (11 pages)

PAGE 1
Smart Low Side Power Switch HITFET BTS 3110N Features Product Summary · Logic Level Input Drain source voltage VDS · Input Protection (ESD) On-state resistance RDS(on) 200 m · Thermal shutdown Nominal load current I D(Nom) 1.
PAGE 2
Smart Low Side Power Switch HITFET BTS 3110N Maximum Ratings at T j = 25°C, unless otherwise specified Parameter Symbol Value Drain source voltage VDS 42 Drain source voltage for short circuit protection VDS(SC) 18 Unit V T j = -40...150°C IIN Continuous input current mA -0.2V VIN 10V no limit VIN < -0.2V or VIN > 10V Operating temperature | IIN | 2 Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation Ptot 3.
PAGE 3
Smart Low Side Power Switch HITFET BTS 3110N Electrical Characteristics Symbol Parameter at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. 42 - 55 V - 1.5 10 µA Characteristics VDS(AZ) Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150°C IDSS VDS = 32 V, VIN = 0 V VIN(th) Input threshold voltage V ID = 0.3 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 0.3 mA, Tj = 150 °C 0.
PAGE 4
Smart Low Side Power Switch HITFET BTS 3110N Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. t on - 45 100 t off - 60 100 -dV DS/dt on - 0.4 1.5 dV DS/dt off - 0.6 1.5 Dynamic Characteristics VIN to 90% I D: R L = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: Turn-on time R L = 4.7 , VIN = 10 to 0 V, Vbb = 12 V 70 to 50% Vbb: R L = 4.
PAGE 5
Smart Low Side Power Switch HITFET BTS 3110N Block diagram Inductive and overvoltage output clamp Terms RL V D Z 2 I IN 1 D IN ID VDS Vbb HITFET S S 3 VIN HITFET Short circuit behaviour Input circuit (ESD protection) V IN Gate Drive Input I Source/ Ground IN I D T t t t j t Datasheet 5 Rev. 1.
PAGE 6
Smart Low Side Power Switch HITFET BTS 3110N 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TS) resp. Ptot = f(TA) @ R thJA=72 K/W R ON = f(T j); ID=1.4A; V IN=10V 10 500 m W 8 RDS(on) 7 Ptot max. 400 max. 6 350 300 5 250 4 200 3 150 2 6cm2 100 1 0 -75 typ. 50 -50 -25 0 25 50 75 100 °C 0 -50 150 -25 0 25 50 75 100 125 °C TS ;TA 3 On-state resistance 4 Typ. input threshold voltage R ON = f(Tj ); ID= 1.4A; VIN=5V VIN(th) = f(T j); ID = 0.
PAGE 7
Smart Low Side Power Switch HITFET BTS 3110N 5 Typ. transfer characteristics 6 Typ. short circuit current ID =f(VIN ); VDS=12V; TJstart=25°C I D(lim) = f(Tj); VDS=12V Parameter: V IN 10 8 A A 8 7 I D(lim) ID 6 5 6 Vin=10V 5 4 5V 4 3 3 2 2 1 0 0 1 1 2 3 4 5 6 7 8 V 0 -50 10 -25 0 25 50 75 100 125 °C VIN 175 Tj 7 Typ. output characteristics 8 Typ. off-state drain current ID =f(VDS ); TJstart =25°C IDSS = f(Tj ) Parameter: V IN 10 Vin=10V A 11 µA 7V max.
PAGE 8
Smart Low Side Power Switch HITFET BTS 3110N 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb =12 V, no heatsink Parameter: Tjstart Z thJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 12 2 K/W D=0.5 A -40°C 0.2 1 0.1 25°C ZthJA I D(lim) 10 8 85°C 0.05 10 6 0 0.02 0.01 150°C 4 10 -1 10 -2 2 Single pulse 0 0 0.5 1 1.5 2 2.
PAGE 9
Smart Low Side Power Switch HITFET BTS 3110N Package Outlines Package Outlines 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 1 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.
PAGE 10
Smart Low Side Power Switch HITFET BTS 3110N Revision History 2 Revision History Version Rev. 1.3 Date Changes 2008-04-14 Package information updated to SOT223-4 Rev. 1.2 2007-03-28 released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.
PAGE 11
Edition 2008-04-14 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).