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BTS3160D

10mOhm Smart Low Side Power Switch

Datasheet, Rev. 1.1, February 2008

Automotive Power

Summary of content (30 pages)

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Datasheet, Rev. 1.
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Smart Low Side Power Switch HITFET - BTS3160D Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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BTS3160D Smart Low Side Power Switch HITFET - BTS3160D 1 Overview The BTS3160D is a one channel low-side power switch in PG-TO-252-5-13 package providing embedded protective functions. The power transistor is realized by a N-channel vertical power MOSFET. The device is controlled by a chip in Smart Power Technology. PG-TO-252-5-13 Features • • • • • • • Logic level input compatible to 3.
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Smart Low Side Power Switch HITFET - BTS3160D Overview Digital Diagnostic • • • Over temperature shutdown Over load shutdown Short circuit shutdown Protection Functions • • • • Electrostatic discharge (ESD) Under voltage lock out Over temperature (shutdown with latch) Over voltage (active clamped) Application • • • • • Micro controller compatible low side power switch with digital feedback for 12V loads All types of resistive, inductive and capacitive loads Suitable for loads with high inrush current,
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Smart Low Side Power Switch HITFET - BTS3160D Block Diagram 2 Block Diagram VS IN / Fault Under voltage lockout Gate Driving Unit Drain Overvoltage Protection Overtemperature Protection ϑ Error Logic Short circuit Protection ESD Protection GND B loc k Diagram.emf Figure 1 Datasheet Block Diagram for the BTS3160D 5 Rev. 1.
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Smart Low Side Power Switch HITFET - BTS3160D Block Diagram 2.1 Voltage and current naming definition Following figure shows all the terms used in this datasheet, with associated convention for positive values. Vbb Vbb IS VS RL VS Drain I IN VIN IN / Fault ID VD GND I GND GND Terms .emf Figure 2 Datasheet Terms 6 Rev. 1.
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Smart Low Side Power Switch HITFET - BTS3160D Pin Configuration 3 Pin Configuration 3.1 Pin Assignment BTS3160D (top view) Drain 6 (Tab) 5 GND 4 GND 3 2 IN / Fault 1 VS P inConfiguration.emf Figure 3 Pin Configuration PG-TO-252-5-13 3.2 Pin Definitions and Functions Pin Symbol Function 1 VS Supply Voltage; Connected to Battery Voltage with Reverse polarity protection 2 IN Control Input and Status Feedback; Digital input 3.3 V or 5 V logic.
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Smart Low Side Power Switch HITFET - BTS3160D General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C; VS = 6 V to 30 V. All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Max. Unit Conditions Voltages 4.1.1 Supply voltage VS -0.3 30 V – 4.1.2 Supply voltage during active clamping VS(pulse) -0.
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Smart Low Side Power Switch HITFET - BTS3160D General Product Characteristics 4.2 Pos. Functional Range Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions 4.2.1 Supply Voltage VS 6 13.5 30 V – 4.2.2 Supply current in off mode IS(OFF) – 1.5 – µA VIN = 0.0 V; VS = 13.5 V; TJ = 25 °C – – 4 VIN = 0.0 V; VS = 13.5 V; TJ = 85 °C1) – – 10 VIN = 0.0 V; VS = 13.5 V; TJ = 150 °C – 1.6 3 4.2.3 Supply current in on IS mA VIN = 5.
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Smart Low Side Power Switch HITFET - BTS3160D General Product Characteristics K/W 102 D = 0.5 101 D = 0.2 D = 0.1 ZthJA D = 0.05 1 D = 0.02 D = 0.01 Single pulse 10-1 10-6 10-5 10-4 10-3 10-2 10-1 1 101 102 103 s tp Zth.emf Figure 4 Typical transient thermal impedance ZthJA = f(tp) , D = tp/T, Ta = 25 °C Device on 50 mm × 50 mm × 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB mounted vertical without blown air. Datasheet 10 Rev. 1.
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Smart Low Side Power Switch HITFET - BTS3160D Supply and Input Stage 5 Supply and Input Stage 5.1 Supply Circuit The Supply pin VS is protected against ESD pulses as shown in Figure 5. Due to an internal voltage regulator the device can be supplied from battery line. 6.0V ...30 V VS Regulator ZD GND Figure 5 Supply Circuit 5.1.1 Under Voltage Lock Out / Power On Reset S upply.
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Smart Low Side Power Switch HITFET - BTS3160D Supply and Input Stage 5.2 Input Circuit Figure 7 shows the input circuit of the BTS3160D. It’s ensured that the device switches off in case of open input pin. A zener structure protects the input circuit against ESD pulses. As the BTS3160D has a supply pin, the operation of the power MOS can be maintained regardless of the voltage on the IN pin, therefore a digital status feedback down to logic low is realized.
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Smart Low Side Power Switch HITFET - BTS3160D Supply and Input Stage 5.3 Electrical Characteristics Supply and Input Stages VS = 6 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions Under Voltage Lockout 5.3.1 UV-switch-on voltage VSUVON – – 5.5 V VS = 5.5 V 5.3.2 UV-switch-off voltage VSUVOFF 4.0 – – V VS = 4.0 V 5.3.
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Smart Low Side Power Switch HITFET - BTS3160D Power Stage 6 Power Stage The power stage is built by a N-channel vertical power MOSFET (DMOS) 6.1 Output On-state Resistance The on-state resistance depends on the supply voltage as well as on the junction temperature TJ. Figure 9 shows the dependency over temperature for the typical on-state resistance RDS(on),while Figure 10 shows the dependency over Vs. VS=10V RDS(on) [ mΩ ] 16,00 14,00 12,00 typ.
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Smart Low Side Power Switch HITFET - BTS3160D Power Stage 50,00 45,00 R DS(on) [mΩ ] 40,00 35,00 30,00 25,00 20,00 typ. 15,00 10,00 5,00 0 10 20 30 VS [V] rdson_V s.emf Figure 10 Typical On-State Resistance RDSon = f(VS) 70 VS= 10V 60 & VS= 30V VS = 6V ID [A] 50 40 typ. 30 20 10 0 0 0,5 1 VDS [V] Figure 11 Datasheet 1,5 Outputchar.emf Typical Output Characteristics, TJstart = 25 °C, Parameter VS 15 Rev. 1.
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Smart Low Side Power Switch HITFET - BTS3160D Power Stage 6,00 I DSS [µA] Idss [µA] 4,00 2,00 typ. 0,00 -50 -25 0 25 50 75 100 125 150 175 Tj [°C] TJ [°C] Figure 12 Datasheet Zeroindrain.emf Typical Zero Input Voltage Drain Current, IDSS = f(TJ) 16 Rev. 1.
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Smart Low Side Power Switch HITFET - BTS3160D Power Stage 6.2 Output Timing and Slopes A high signal on the input pin causes the power MOSFET to switch on with a dedicated slope which is optimized for low EMC emission. Figure 13 shows the timing definition. IN High Low VD t on t off tond t toffd V bb 90 % 60 % -dVD / dto n 40 % dV D / dtoff 10 % t OutputTiming.
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Smart Low Side Power Switch HITFET - BTS3160D Power Stage 6.3 Inductive Output Clamp When switching off inductive loads with low-side switches, the Drain Source voltage VD rises above battery potential, because the inductance intends to continue driving the current. The BTS3160D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage VD at a certain level. See Figure 15 for more details. Drain GND OutputClamp.
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Smart Low Side Power Switch HITFET - BTS3160D Power Stage Figure 17 shows the inductance / current combination the BTS3160D can handle. For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 8 L [mH] 10,0 Vbb = 30V 1,0 Max. 0,1 0,0 10 I D [A] 100 EAS.emf Figure 17 Datasheet Maximum load inductance for single pulse L=f (IL), Tj,start= 150 °C 19 Rev. 1.
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Smart Low Side Power Switch HITFET - BTS3160D Power Stage 6.4 Electrical Characteristics Power Stage VS = 6 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. – 8 10 mΩ ID = 20 A; VIN = high; VS = 10 V; TJ = 25 °C – 14 18 mΩ ID = 20 A; VIN = high; VS = 10 V; TJ = 150 °C Power Supply 6.4.1 On-state resistance RDS(on) 6.4.
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Smart Low Side Power Switch HITFET - BTS3160D Power Stage VS = 6 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions 6.4.13 Slew rate between edge shaping |dI/dt|fast – – 0.3 A/µs 1) 6.4.14 Fault signal delay tdfault – 4 10 µs 1) VD -0.3 -1.0 -1.5 V ID = -12 A; VS = 0 V; VIN = 0.0 V RL = 2.2 Ω Vbb = VS = 13.
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Smart Low Side Power Switch HITFET - BTS3160D Protection Functions 7 Protection Functions The device provides embedded protection functions against over temperature, over load and short circuit. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operation. 7.
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Smart Low Side Power Switch HITFET - BTS3160D Protection Functions VDO Overload Thermal shutdown Short circuit Short Circuit shut off short spike High Low ID t I DSC t d sc t d sc I Dno m tdfau lt I IN t dfau lt t I INfault I INno m 0 t V DI High Low t S hort circuit Ty pe 2.
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Smart Low Side Power Switch HITFET - BTS3160D Protection Functions The test setup for short circuit characterization is shown in Figure 21. The BTS3160D is a low side switch. Therefore it can be assumed that the micro controller and device GND connection have a low impedance. The Vs voltage needs to be stabilized to ensure the protection features. In application this is often already covered from the module standard circuits.
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Smart Low Side Power Switch HITFET - BTS3160D Protection Functions 7.4 Electrical Characteristics Protection VS = 6 V to 30 V, Tj = -40 °C to +150 °C All voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions Thermal Protection 7.4.1 Thermal shut down junction temperature TJSD 150 1751) – °C VS = 6.0 V 7.4.
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Smart Low Side Power Switch HITFET - BTS3160D Application Information 8 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 8.
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Smart Low Side Power Switch HITFET - BTS3160D Application Information Conditions in formulas: 1. µCoutput current,min > µCHIGH,max / RIN > IFault_ONth with µCoutput current,min referring to the micro controller maximum output current capability. with µCHIGH,max referring to the maximal high output voltage of the micro controller driving stage. This condition is valid during status feedback operation mode. 2.
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Smart Low Side Power Switch HITFET - BTS3160D Package Outlines Package Outlines A 5.7 MAX. 1) B 9.98 ±0.5 6.22 -0.2 0.15 MAX. per side 0.5 +0.08 -0.04 0.9 +0.20 -0.01 0...0.15 5 x 0.6 ±0.1 1.14 4.56 0.5 +0.08 -0.04 0.1 B 0.25 M A B 1) Includes mold flashes on each side. All metal surfaces tin plated, except area of cut. Figure 23 2.3 +0.05 -0.10 (5) 0.8 ±0.15 1±0.1 (4.24) 6.5 +0.15 -0.05 0.51 MIN. 9 PG-TO252-5-13-PO V0.
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Smart Low Side Power Switch HITFET - BTS3160D Revision History 10 Version Revision History Date Changes Rev. 1.1 2008-02-28 released automotive green and robust version changed package naming to green package, updated package drawing updated package drawing and description text on overview page added RoHS logo to overview page and added green feature to list Rev. 1.0 2007-08-14 first released datasheet revision Datasheet 29 Rev. 1.
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Edition 2008-02-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.